公开(公告)号：US20180258549A1

公开(公告)日：2018-09-13

申请号：US15976224

申请日：2018-05-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: C30B25/04 ,  H01L21/02 ,  H01L21/3065 ,  C30B25/18 ,  C30B29/06 ,  C30B25/14 ,  C30B25/10 ,  C30B33/12

CPC classification number: C30B25/04 ,  C30B25/105 ,  C30B25/14 ,  C30B25/183 ,  C30B25/186 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065

Abstract: An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

公开(公告)号：US20180069141A1

公开(公告)日：2018-03-08

申请号：US15812673

申请日：2017-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0465 ,  H01L31/20 ,  H01L31/046 ,  H01L31/18 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/076 ,  H01L31/0224 ,  H01L31/077 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/0463 ,  H01L31/068

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US20150270424A1

公开(公告)日：2015-09-24

申请号：US14730502

申请日：2015-06-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/0352 ,  H01L31/0747

CPC classification number: H01L31/0747 ,  B82Y20/00 ,  H01L31/022441 ,  H01L31/035236 ,  H01L31/035254 ,  H01L31/0516 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

Abstract translation: 光电器件和方法包括耦合到衬底的第一侧上的发射极侧结构的衬底和与衬底的第一侧相对的一侧的背侧结构。 发射极侧结构或背面结构包括在宽带隙层和窄带隙层之间交替的层，以提供与衬底有效增加的带偏移和/或在单个材料接触上有效地更高的掺杂水平的多层接触。 发射极触点耦合到器件的光收集端部上的发射极侧结构。 背面接触件与与光收集端部相对的背面结构耦合。

公开(公告)号：US20140159162A1

公开(公告)日：2014-06-12

申请号：US13708531

申请日：2012-12-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JIN CAI ,  KEVIN K. CHAN ,  ROBERT H. DENNARD ,  BRUCE B. DORIS ,  BARRY P. LINDER ,  RAMACHANDRAN MURALIDHAR ,  GHAVAM G. SHAHIDI

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for forming a fin transistor in a bulk substrate includes forming a super steep retrograde well (SSRW) on a bulk substrate. The well includes a doped portion of a first conductivity type dopant formed below an undoped layer. A fin material is grown over the undoped layer. A fin structure is formed from the fin material, and the fin material is undoped or doped. Source and drain regions are provided adjacent to the fin structure to form a fin field effect transistor.

公开(公告)号：US20160359068A1

公开(公告)日：2016-12-08

申请号：US15235216

申请日：2016-08-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0465 ,  H01L31/077 ,  H01L31/076 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0224

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US20150318425A1

公开(公告)日：2015-11-05

申请号：US14796546

申请日：2015-07-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0475 ,  H01L31/05

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

Abstract translation: 一种用于制造具有集成光伏电池的器件的方法包括在第一处理衬底上支撑半导体衬底并掺杂半导体衬底以形成具有相反导电性的掺杂交替区域。 掺杂层形成在半导体衬底的第一侧上。 在掺杂层上图案化导电材料以形成导电岛，使得导电岛与交替区对准以限定在单片结构上串联连接的多个光伏电池。

公开(公告)号：US20150255574A1

公开(公告)日：2015-09-10

申请号：US14720328

申请日：2015-05-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： WILFRIED E. HAENSCH ,  BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  TAK H. NING ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L29/66477 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/2257 ,  H01L21/265 ,  H01L21/823814 ,  H01L21/84 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7841 ,  H01L29/78618 ,  H01L29/78621

Abstract: A back end of line device and method for fabricating a transistor device include a substrate having an insulating layer formed thereon and a channel layer formed on the insulating layer. A gate structure is formed on the channel layer. Dopants are implanted into an upper portion of the channel layer on opposite sides of the gate structure to form shallow source and drain regions using a low temperature implantation process. An epitaxial layer is selectively grown on the shallow source and drain regions to form raised regions above the channel layer and against the gate structure using a low temperature plasma enhanced chemical vapor deposition process, wherein low temperature is less than about 400 degrees Celsius.

公开(公告)号：US20150247259A1

公开(公告)日：2015-09-03

申请号：US14711403

申请日：2015-05-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: C30B25/18 ,  C30B29/06 ,  C30B25/10

Abstract: An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

Abstract translation: 外延生长方法包括提供衬底材料的暴露的结晶区域。 硅在低温工艺中外延沉积在衬底材料上，其中淀积温度低于500摄氏度。 源气体用稀释气体稀释，稀释气体与原料气体的气体比小于1000。

公开(公告)号：US20200259658A1

公开(公告)日：2020-08-13

申请号：US16270145

申请日：2019-02-07

Applicant: International Business Machines Corporation

Inventor： FRANK R. LIBSCH ,  SEIJI MUNETOH ,  ABHILASH NARENDRA ,  GHAVAM G. SHAHIDI

IPC: H04L9/32 ,  G06F21/72

Abstract: A processor-implemented method imposes trust at the edge of a blockchain. A hardware interrogator in a terminal interrogates an Internet of Things Smart Device (IoTSD). The IoTSD is an off-line device that is associated with a physical product. The IoTSD includes a cryptographic processor and one or more state sensors that monitor a state of the physical product. The hardware interrogator detects an event that is described by an encrypted entry in the IoTSD. The terminal transmits, to a blockchain, a transaction that describes the event that is detected by the hardware interrogator, such that the blockchain adds the transaction to a blockchain that is dedicated to the physical product, and the blockchain establishes a state of the physical product.

公开(公告)号：US20150318416A1

公开(公告)日：2015-11-05

申请号：US14798248

申请日：2015-07-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOARTABARI ,  ALI KHAKIFIROOZ ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0236 ,  H01L31/0352 ,  H01L31/0725

CPC classification number: H01L31/02363 ,  H01L31/03529 ,  H01L31/0725 ,  Y02E10/50

Abstract: A method for forming a multi-junction photovoltaic device includes providing a germanium layer and etching pyramidal shapes in the germanium layer such that (111) facets are exposed to form a textured surface. A first p-n junction is formed on or over the textured surface from III-V semiconductor materials. Another p-n junction is formed over the first p-n junction from III-V semiconductor materials and follows the textured surface.

Abstract translation: 一种用于形成多结光伏器件的方法包括提供锗层并在锗层中蚀刻金字塔形，使得（111）面被暴露以形成纹理表面。 在III-V半导体材料的纹理表面上或上方形成第一p-n结。 在III-V半导体材料的第一个p-n结上形成另一个p-n结，并跟随纹理表面。