公开(公告)号：US11460499B2

公开(公告)日：2022-10-04

申请号：US16573946

申请日：2019-09-17

Applicant: Intel Corporation

Inventor： Henning Braunisch ,  Aleksandar Aleksov ,  Veronica Strong ,  Brandon Rawlings ,  Johanna Swan ,  Shawna Liff

IPC: H01L23/498 ,  H01L23/538 ,  H01L23/31 ,  G01R31/28 ,  G01K7/42 ,  G01K7/02

Abstract: An integrated circuit package having an electronic interposer comprising an upper section, a lower section and a middle section, a die side integrated circuit device electrically attached to the upper section of the electronic interposer, a die side heat dissipation device thermally contacting the die side integrated circuit device, a land side integrated circuit device electrically attached to the lower section of the electronic interposer, and a land side heat dissipation device thermally contacting the at least one die side integrated circuit device. The upper section and the lower section may each have between two and four layers and the middle section may be formed between the upper section and the lower section, and comprises up to eight layers, wherein a thickness of each layer of the middle section is thinner than a thickness of any of the layers of the upper section and the lower section.

公开(公告)号：US11328996B2

公开(公告)日：2022-05-10

申请号：US16648640

申请日：2017-12-30

Applicant: Intel Corporation

Inventor： Veronica Strong ,  Aleksandar Aleksov ,  Brandon Rawlings

IPC: H01L23/538 ,  H01L23/522 ,  H01L23/00

Abstract: A device package and method of forming the device package are described. The device package includes a dielectric on a conductive pad, a first via on a top surface of conductive pad, where the first via extends through dielectric, and a conductive trace on dielectric. The device package has a second via on dielectric, where the conductive trace connects to first and second vias, and the second via connects to an edge of conductive trace opposite from first via. The device package may have a seed on dielectric, where the seed electrically couples to conductive trace, a first seed on the top surface of conductive pad, where the first via is on first seed, and a second seed on a top surface of first via, the second seed on surfaces of second via, where the conductive trace is on second seed disposed on both first and second vias.

公开(公告)号：US11222836B2

公开(公告)日：2022-01-11

申请号：US16649578

申请日：2017-12-30

Applicant: Intel Corporation

Inventor： Veronica Strong ,  Aleksandar Aleksov ,  Brandon Rawlings ,  Johanna Swan

IPC: H01L29/40 ,  H01L23/498 ,  H01L21/48 ,  H01L23/48 ,  H01L23/538

Abstract: Device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS directly coupled to the interconnect. The ZM2VS further includes the dielectric on a conductive pad, a first via on a first seed, and first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS also has a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.

公开(公告)号：US20210082822A1

公开(公告)日：2021-03-18

申请号：US16573943

申请日：2019-09-17

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Henning Braunisch ,  Shawna Liff ,  Brandon Rawlings ,  Veronica Strong ,  Johanna Swan

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/498

Abstract: An electronic interposer may be formed comprising an upper section, a lower section and a middle section. The upper section and the lower section may each have between two and four layers, wherein each layer comprises an organic material layer and at least one conductive route comprising at least one conductive trace and at least one conductive via. The middle section may be formed between the upper section and the lower section, wherein the middle section comprises up to eight layers, wherein each layer comprises an organic material and at least one conductive route comprising at least one conductive trace and at least one conductive via, and wherein a thickness of each layer of the middle section is thinner than a thickness of any of the layers of the upper section and thinner than a thickness of any of the layers of the lower section.

公开(公告)号：US20230198058A1

公开(公告)日：2023-06-22

申请号：US17556784

申请日：2021-12-20

Applicant: Intel Corporation

Inventor： Veronica Strong ,  Telesphor Kamgaing ,  Neelam Prabhu Gaunkar ,  Georgios Dogiamis ,  Aleksandar Aleksov ,  Brandon Rawlings

IPC: H01M50/117 ,  H01L23/58

CPC classification number: H01M50/117 ,  H01L23/58

Abstract: Embedded batteries within glass cores are disclosed. Example apparatus include a glass core layer having opposing first and second surfaces, the glass core layer including a cavity extending from the first surface toward the second surface, and a battery including a first conductive material positioned in the cavity, a second conductive material positioned in the cavity, and an electrolyte to separate the first conductive material from the second conductive material.

公开(公告)号：US20220084927A1

公开(公告)日：2022-03-17

申请号：US17536711

申请日：2021-11-29

Applicant: INTEL CORPORATION

Inventor： Aleksandar Aleksov ,  Veronica Strong ,  Kristof Darmawikarta ,  Arnab Sarkar

IPC: H01L23/498 ,  H01L21/48 ,  H05K1/11 ,  H05K3/18

Abstract: A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

公开(公告)号：US20210343635A1

公开(公告)日：2021-11-04

申请号：US17375360

申请日：2021-07-14

Applicant: Intel Corporation

Inventor： Johanna Swan ,  Henning Braunisch ,  Aleksandar Aleksov ,  Shawna Liff ,  Brandon Rawlings ,  Veronica Strong

IPC: H01L23/498 ,  G03F1/38 ,  G03F1/54 ,  G03F1/68

Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.

公开(公告)号：US20210202347A1

公开(公告)日：2021-07-01

申请号：US16727703

申请日：2019-12-26

Applicant: Intel Corporation

Inventor： Shawna Liff ,  Adel Elsherbini ,  Johanna Swan ,  Jimin Yao ,  Veronica Strong

IPC: H01L23/373 ,  H01L23/48 ,  H01L25/065 ,  H01L21/768

Abstract: A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.