摘要:
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要:
In some embodiments, a current perpendicular to the plane giant magneto-resistance (CPP GMR) read sensor may include a reference layer and/or a free layer that includes a plurality of sub-layers. For example, at least one of the reference layer or free layer may include a first ferromagnetic sub-layer, a second ferromagnetic sub-layer, and a Heusler alloy layer located between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer. In some embodiments, a CPP GMR read sensor may include a current closed path (CCP) spacer layer between the reference layer and the free layer. The CCP spacer layer may include Ag and Al2O3. In further embodiments, a CPP GMR read sensor may include a Heusler alloy free layer, a Heusler alloy reference layer, and a CCP spacer layer.
摘要:
A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.