摘要:
Methods, systems and other embodiments associated with a laser communication system using a single wavelength are presented. A first data is modulated onto an RF carrier to produce a modulated RF carrier. A laser is intensity modulated using with the modulated RF carrier. The intensity modulated laser beam is transmitted from an interrogator to a modulating retro-reflector (MRR) terminal. A portion of the laser beam is received at a receiver at the MRR terminal. Another portion of the laser is modulated at the MRR terminal with a second data to produce a re-modulated laser beam. The re-modulated laser beam is reflected back to the interrogator.
摘要:
A fiber optic link for platforms with data sources including, e.g., sensors, cameras, radars and antennas. An array of optical transmitter/receiver pairs is coupled to an integrating network of the platform. Data modules are each coupled to certain ones of the data sources and include a receiver for detecting control data, and a modulator for modulating a light signal according to signals from the module's data sources. At least one optical fiber is coupled between a given transmitter/receiver pair of the array, and a corresponding data module. A laser source associated with each transmitter supplies a light signal with the control data to a corresponding data module downstream over an optical fiber. The light signal is modulated by the signals from the module's data sources, and the modulated light signal is returned to an array receiver upstream over an optical fiber.
摘要:
A method, system and apparatus are provided for measuring the quality of voice (QOV) in a communication network. A time-stamped voice data packet is received. The time stamped on the voice data packet indicates the time at which the voice data packet arrives at intermediate devices. In an embodiment of the invention, the intermediate devices at each hop stamp the time. Thereafter, the voice data packets are analyzed to measure the quality of voice in the communication network.
摘要:
The presence of oval defects on MBE-grown compound semiconductor (e.g., GaAs, InP, or InGaAs) epitaxial layers has proven to be a serious obstacle to the use of such material for the manufacture of integrated circuits (ICs), even though the use of such material potentially could result in ICs having superior performance. One particularly prevalent type of oval defect is generally referred to as .alpha.-type. It has now been discovered that compound semiconductor epitaxial layers that are essentially free of .alpha.-type oval defects can be grown by MBE if first at least a portion of the Ga and/or In metal crucible is coated with an appropriate second metal. The second metal is chosen from the group of metals that are wetted by the first metal and that are less electronegative than the first metal. Aluminum is a currently preferred second metal. Advantageously the interior of the (typically pBN) crucible is Al-coated at least at and near the orifice of the crucible, whereby formation of drops of first metal is prevented.