公开(公告)号：US20100044800A1

公开(公告)日：2010-02-25

申请号：US12589421

申请日：2009-10-23

申请人： Joshua Tseng ,  Kang-Cheng Lin ,  Ji-Yi Yang ,  Kuo-Tai Huang ,  Ryan Chia-Jen Chen

发明人： Joshua Tseng ,  Kang-Cheng Lin ,  Ji-Yi Yang ,  Kuo-Tai Huang ,  Ryan Chia-Jen Chen

IPC分类号： H01L27/092

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric.

摘要翻译： 金属栅极/高k电介质半导体器件提供形成在半导体衬底上的NMOS栅极结构和PMOS栅极结构。 NMOS栅极结构包括用诸如La的掺杂剂杂质处理的高k栅极电介质，并且PMOS栅极结构的高k栅极电介质材料缺乏该掺杂杂质，并且还包括高功率调制层， k栅极电介质。

公开(公告)号：US07625791B2

公开(公告)日：2009-12-01

申请号：US11926830

申请日：2007-10-29

申请人： Joshua Tseng ,  Kang-Cheng Lin ,  Ji-Yi Yang ,  Kuo-Tai Huang ,  Ryan Chia-Jen Chen

发明人： Joshua Tseng ,  Kang-Cheng Lin ,  Ji-Yi Yang ,  Kuo-Tai Huang ,  Ryan Chia-Jen Chen

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric. A process for simultaneously forming the NMOS and PMOS gate structures includes forming the high-k gate dielectric material, and the work function tuning layer thereover, then selectively removing the work function tuning layer from the NMOS region and carrying out a plasma treatment to selectively dope the high-k gate dielectric material in the NMOS region with a dopant impurity while the high-k gate dielectric in the PMOS region is substantially free of the dopant impurity.

摘要翻译： 金属栅极/高k电介质半导体器件提供形成在半导体衬底上的NMOS栅极结构和PMOS栅极结构。 NMOS栅极结构包括用诸如La的掺杂剂杂质处理的高k栅极电介质，并且PMOS栅极结构的高k栅极电介质材料缺乏该掺杂杂质，并且还包括高功率调制层， k栅极电介质。 用于同时形成NMOS和PMOS栅极结构的工艺包括在其上形成高k栅极介电材料和功函数调谐层，然后从NMOS区选择性地去除功函数调谐层，并进行等离子体处理以选择性地掺杂 具有掺杂剂杂质的NMOS区域中的高k栅极电介质材料，而PMOS区域中的高k栅极电介质基本上不含掺杂剂杂质。