摘要:
An apparatus for optical calibration includes a calibration target simulating a combustion. The calibration target further includes a first light-emitting pattern and a first light-emitting mechanism effecting the first light-emitting pattern. The apparatus includes two optical cameras aiming at the calibration target, wherein each optical camera has an observation axis and there is an angle between the two observation axes.
摘要:
Improved methods for synthesizing large area thin films are disclosed, which result in films of enhanced width. The methods comprise providing a separator material which is rolled or wound up, along with the metallic foil substrate on which the thin film is to be deposited, to form a coiled composite which is then subjected to conventional chemical vapor deposition. Optionally, a winding tool may be used to aid in the rolling process. The methods enable a many-fold increase in the effective width of the substrate to be achieved.
摘要:
An electroplating etching apparatus includes a power supply to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.
摘要:
An apparatus for performing film deposition includes one or more processing tubes, a heat source, one or more reactant gas manifolds, and one or more exhaust gas manifolds. The one or more processing tubes define a first reaction space and a second reaction space that are not in gaseous communication. The heat source is translatable so as to direct energy into the first reaction space when the energy source is in a first position, and to direct energy into the second reaction space when the energy source is in a second position. The one or more reactant gas manifolds are operative to introduce a first reactant gas flow into the first reaction space, and to introduce a second reactant gas flow into the second reaction space. The one or more exhaust gas manifolds are operative to exhaust gases from the first reaction space and from the second reaction space.
摘要:
Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.