Apparatuses and methods for optical calibration

    公开(公告)号:US10375318B2

    公开(公告)日:2019-08-06

    申请号:US15696791

    申请日:2017-09-06

    申请人: Xuesong Li Siyi Dai

    发明人: Xuesong Li Siyi Dai

    摘要: An apparatus for optical calibration includes a calibration target simulating a combustion. The calibration target further includes a first light-emitting pattern and a first light-emitting mechanism effecting the first light-emitting pattern. The apparatus includes two optical cameras aiming at the calibration target, wherein each optical camera has an observation axis and there is an angle between the two observation axes.

    Method for synthesis of Graphene Films With Large Area and High Throughput
    23.
    发明申请
    Method for synthesis of Graphene Films With Large Area and High Throughput 审中-公开
    用于合成具有大面积和高通量的石墨烯膜的方法

    公开(公告)号:US20140370189A1

    公开(公告)日:2014-12-18

    申请号:US13916611

    申请日:2013-06-13

    IPC分类号: C23C16/26 C23C16/54

    CPC分类号: C23C16/26 C23C16/458

    摘要: Improved methods for synthesizing large area thin films are disclosed, which result in films of enhanced width. The methods comprise providing a separator material which is rolled or wound up, along with the metallic foil substrate on which the thin film is to be deposited, to form a coiled composite which is then subjected to conventional chemical vapor deposition. Optionally, a winding tool may be used to aid in the rolling process. The methods enable a many-fold increase in the effective width of the substrate to be achieved.

    摘要翻译: 公开了用于合成大面积薄膜的改进方法,这导致宽度增加的膜。 所述方法包括提供与要沉积薄膜的金属箔基材一起卷起或卷起的隔板材料,以形成螺旋复合材料,然后将该复合材料进行常规化学气相沉积。 可选地,卷绕工具可用于帮助轧制过程。 这些方法使待实现的基底的有效宽度增加多倍。

    ELECTROCHEMICAL ETCHING APPARATUS
    24.
    发明申请
    ELECTROCHEMICAL ETCHING APPARATUS 审中-公开
    电化学蚀刻装置

    公开(公告)号:US20140076738A1

    公开(公告)日:2014-03-20

    申请号:US13618564

    申请日:2012-09-14

    IPC分类号: C25F3/02

    摘要: An electroplating etching apparatus includes a power supply to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.

    摘要翻译: 电镀蚀刻装置包括用于输出电流的电源和构造成容纳电解质的容器。 阴极耦合到容器并且构造成与电解液流体连通。 阳极电连接到输出端,并且包括石墨烯层。 在石墨烯层上形成金属基底层,并响应于流过阳极的电流从石墨烯层中蚀刻出金属基底层。

    Dual-Chamber Reactor for Chemical Vapor Deposition
    25.
    发明申请
    Dual-Chamber Reactor for Chemical Vapor Deposition 审中-公开
    用于化学气相沉积的双室反应器

    公开(公告)号:US20130344246A1

    公开(公告)日:2013-12-26

    申请号:US13529070

    申请日:2012-06-21

    申请人: Xuesong Li

    发明人: Xuesong Li

    IPC分类号: C23C16/455

    摘要: An apparatus for performing film deposition includes one or more processing tubes, a heat source, one or more reactant gas manifolds, and one or more exhaust gas manifolds. The one or more processing tubes define a first reaction space and a second reaction space that are not in gaseous communication. The heat source is translatable so as to direct energy into the first reaction space when the energy source is in a first position, and to direct energy into the second reaction space when the energy source is in a second position. The one or more reactant gas manifolds are operative to introduce a first reactant gas flow into the first reaction space, and to introduce a second reactant gas flow into the second reaction space. The one or more exhaust gas manifolds are operative to exhaust gases from the first reaction space and from the second reaction space.

    摘要翻译: 用于进行膜沉积的装置包括一个或多个处理管,热源,一个或多个反应气体歧管以及一个或多个排气歧管。 一个或多个处理管限定不与气体连通的第一反应空间和第二反应空间。 热源是可平移的,以便当能量源处于第一位置时将能量引导到第一反应空间中,并且当能量源处于第二位置时将能量引导到第二反应空间中。 一个或多个反应物气体歧管可操作以将第一反应气流引入第一反应空间,并将第二反应气流引入第二反应空间。 一个或多个废气歧管可操作以从第一反应空间和第二反应空间排出气体。

    Graphene synthesis by chemical vapor deposition
    26.
    发明授权
    Graphene synthesis by chemical vapor deposition 有权
    石墨烯化学气相沉积合成

    公开(公告)号:US08470400B2

    公开(公告)日:2013-06-25

    申请号:US12774342

    申请日:2010-05-05

    IPC分类号: C23C16/00

    摘要: Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.

    摘要翻译: 合成石墨烯薄膜的方法。 石墨烯膜可以通过将基板上的金属或电介质加热到400℃和1400℃之间的温度来合成。将金属或电介质暴露于有机化合物,从而从金属或电介质上的有机化合物生长石墨烯 。 然后将金属或电介质冷却至室温。 作为上述方法的结果,独立的石墨烯膜可以合成具有相当于天然石墨剥离的石墨烯的性质,该石墨烯的尺寸远大于在碳化硅,单晶硅衬底或天然石墨上可获得的尺寸。