Etching process
    22.
    发明授权
    Etching process 有权
    蚀刻工艺

    公开(公告)号:US6162366A

    公开(公告)日:2000-12-19

    申请号:US218421

    申请日:1998-12-22

    摘要: An etching process includes the steps of: preparing an etchant containing ferric chloride and an anticorrosive agent for Cu, and etching with said etchant a multi-layer metal structure including a Cu layer and an Ni layer. The etchant may preferably further contain ferrous chloride. The etching process is effective in making etching rates of the respective substantially equal, thus suppressing occurrence of burr portions of the Ni layers.

    摘要翻译: 蚀刻工艺包括以下步骤:制备含有氯化铁的蚀刻剂和用于Cu的防腐剂,并用所述蚀刻剂蚀刻包括Cu层和Ni层的多层金属结构。 蚀刻剂可以优选进一步含有氯化亚铁。 蚀刻工艺对于使蚀刻速率基本相等,从而抑制Ni层的毛刺部分的发生是有效的。

    Two-wavelength antireflection film
    23.
    发明授权
    Two-wavelength antireflection film 失效
    双波长抗反射膜

    公开(公告)号:US5557466A

    公开(公告)日:1996-09-17

    申请号:US299402

    申请日:1994-09-01

    CPC分类号: G02B1/115

    摘要: A two-wavelength antireflection film is constituted by a multi-layered film provided on a substrate so as to have antireflection characteristics for a wavelength .lambda..sub.1 and a wavelength .lambda..sub.2 different from the wavelength .lambda..sub.1. Each of the materials constituting the multi-layered film has a refractive index not exceeding 1.7 for a central wavelength .lambda..sub.0 which is defined by2/.lambda..sub.0 =1/.lambda..sub.1 +1/.lambda..sub.2.The materials constituting the multi-layered film are Al.sub.2 O.sub.3, SiO.sub.2 and MgF.sub.2, or Al.sub.2 O.sub.3 and MgF.sub.2. Each of plural films constituting the multi-layered film has an optical thickness equal to 1/4 of the central wavelength .lambda..sub.0.

    摘要翻译: 双波长抗反射膜由设置在基板上的多层膜构成,以具有波长λ1和不同于波长λ1的波长λ2的抗反射特性。构成多层的材料 对于由2 /λ0 = 1 /λ1 + 1 /λ2定义的中心波长λ0,膜的折射率不超过1.7。构成多层膜的材料是Al 2 O 3,SiO 2和MgF 2,或Al 2 O 3和 MgF2。 构成多层膜的多个膜中的每一个具有等于中心波长λ0的+ E,fra 1/4 + EE的光学厚度。