公开(公告)号：US20140268172A1

公开(公告)日：2014-09-18

申请号：US13797901

申请日：2013-03-12

Applicant: KLA-Tencor Corporation

Inventor： Ali Salehpour ,  Jaydeep Sinha ,  Kurt Lindsay Haller ,  Pradeep Vukkadala ,  George Kren ,  Jiayao Zhang ,  Mehdi Vaez-Iravani

IPC: G01B11/24

CPC classification number: G01B11/303 ,  G01B11/306 ,  G01B2210/56

Abstract: A method of providing high accuracy inspection or metrology in a bright-field differential interference contrast (BF-DIC) system is described. This method can include creating first and second beams from a first light beam. The first and second beams have round cross-sections, and form first partially overlapping scanning spots radially displaced on a substrate. Third and fourth beams are created from the first light beam or a second light beam. The third and fourth beams have elliptical cross-sections, and form second partially overlapping scanning spots tangentially displaced on the substrate. At least one portion of the substrate can be scanned using the first and second partially overlapping scanning spots as the substrate is rotated. Radial and tangential slopes can be determined using measurements obtained from the scanning using the first and second partially overlapping scanning spots. These slopes can be used to determine wafer shape or any localized topography feature.

Abstract translation: 描述了在亮场差分干涉对比（BF-DIC）系统中提供高精度检测或计量的方法。 该方法可以包括从第一光束产生第一和第二光束。 第一和第二光束具有圆形横截面，并形成在衬底上径向位移的第一部分重叠的扫描点。 从第一光束或第二光束产生第三和第四光束。 第三和第四光束具有椭圆形横截面，并形成在衬底上切向位移的第二部分重叠的扫描点。 当衬底旋转时，可以使用第一和第二部分重叠的扫描点来扫描衬底的至少一部分。 可以使用从使用第一和第二部分重叠的扫描点的扫描获得的测量来确定径向和切向斜率。 这些斜面可用于确定晶片形状或任何局部地形特征。

公开(公告)号：US20130336574A1

公开(公告)日：2013-12-19

申请号：US13905448

申请日：2013-05-30

Applicant: KLA-Tencor Corporation

Inventor： Mehran Nasser-Ghodsi ,  Stanley E. Stokowski ,  Mehdi Vaez-Iravani

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An optical inspection tool is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

Abstract translation: 公开了用于检查极紫外（EUV）掩模版的方法和装置。 在EUV掩模版上形成图案之前，使用光学检查工具获得EUV掩模版的相位缺陷图，并且相位缺陷图识别EUV掩模版上每个相位缺陷的位置。 在EUV掩模版上形成图案之后，使用带电粒子工具来获得在相位缺陷图中所识别的每个相缺陷的每个位置附近的每个掩模版部分的图像。 显示或存储相位缺陷图以及接近每个相位缺陷的每个位置的每个标线片部分的一个或多个图像，以便于分析是否修复或丢弃EUV掩模版。

公开(公告)号：US20130235374A1

公开(公告)日：2013-09-12

申请号：US13783290

申请日：2013-03-02

Applicant: KLA-TENCOR CORPORATION

Inventor： Stephen Biellak ,  Mehdi Vaez-Iravani

IPC: G01N21/88

CPC classification number: G01N21/8806 ,  G01N21/9501

Abstract: Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to illuminate a set of spots on a wafer and a collection subsystem configured to collect light from the set of spots. The collection subsystem separately images the light collected from each of the individual spots onto only a corresponding first detector of a first detection subsystem. The collection subsystem also images the light collected from at least some of the individual spots onto a number of second detectors of a second detection subsystem that is less than a number of spots in the set. Output produced by the first and second detectors can be used to detect defects on the wafer.

Abstract translation: 提供了配置用于检查晶片的系统。 一个系统包括被配置为照亮晶片上的一组斑点的照明子系统和被配置为收集该组斑点的光的收集子系统。 收集子系统将从每个单个斑点收集的光分别成像到第一检测子系统的对应的第一检测器上。 收集子系统还将从至少一些单个点收集的光成像到第二检测子系统的多个第二检测器，该第二检测子系统小于集合中的多个点。 由第一和第二检测器产生的输出可用于检测晶片上的缺陷。