Process Aware Metrology
    21.
    发明申请
    Process Aware Metrology 有权
    过程感知计量

    公开(公告)号:US20130282340A1

    公开(公告)日:2013-10-24

    申请号:US13919577

    申请日:2013-06-17

    Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

    Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值,模拟使用标称值在晶片上形成的结构的一个或多个特性, 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

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