公开(公告)号：US06765167B2

公开(公告)日：2004-07-20

申请号：US09950679

申请日：2001-09-13

申请人： Shigeru Kikuchi ,  Masaya Takahashi ,  Noboru Baba ,  Masato Kobayashi ,  Yoshitomo Goto ,  Yasuaki Suzuki ,  Takashi Sato

发明人： Shigeru Kikuchi ,  Masaya Takahashi ,  Noboru Baba ,  Masato Kobayashi ,  Yoshitomo Goto ,  Yasuaki Suzuki ,  Takashi Sato

IPC分类号： H01H3366

CPC分类号： H01H11/048 ,  H01H1/0206

摘要： An electric contact member has a texture wherein fire proof metal powder having the form of a flat plate is diffused in a matrix of a highly conductive metal. The flat surface is oriented in one direction and the surface in parallel with the flat surface of the fire proof metal powder is used as a contact point face.

摘要翻译： 电接触构件具有将具有平板形式的防火金属粉末扩散到高导电性金属的基体中的质地。 平面在一个方向上定向，并且与防火金属粉末的平坦表面平行的表面用作接触面。

公开(公告)号：US5900324A

公开(公告)日：1999-05-04

申请号：US548863

申请日：1995-10-26

申请人： Keiji Moroishi ,  Takashi Sato ,  Jun-ichi Horikawa ,  Masato Kobayashi ,  Hisao Kawai ,  Osamu Nozawa

发明人： Keiji Moroishi ,  Takashi Sato ,  Jun-ichi Horikawa ,  Masato Kobayashi ,  Hisao Kawai ,  Osamu Nozawa

IPC分类号： G11B5/66 ,  G11B5/73 ,  G11B5/851

CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/851 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12632 ,  Y10T428/12826

摘要： Disclosed are magnetic recording media comprising, on a substrate, two or more CrPt based magnetic layers and one or more CrMo based non-magnetic spacer layers between the magnetic layers and processes for preparation thereof. The magnetic recording media of the present invention include magnetic tapes and magnetic disks. The magnetic recording media are capable of suppressing noise generation upon reproducing recorded signals by employing magnetic layers having a small thickness. The magnetic recorders utilizing the above magnetic recording media are also disclosed.

摘要翻译： 公开了一种磁记录介质，其在基板上包括两个或更多个基于CrPt的磁性层和在磁性层之间的一个或多个CrMo基非磁性间隔层及其制备方法。 本发明的磁记录介质包括磁带和磁盘。 通过采用具有小厚度的磁性层，磁记录介质能够抑制再现记录信号时的噪声产生。 还公开了利用上述磁记录介质的磁记录器。

公开(公告)号：US5746893A

公开(公告)日：1998-05-05

申请号：US575019

申请日：1995-12-19

申请人： Masato Kobayashi ,  Osamu Nozawa ,  Hisao Kawai ,  Keiji Moroishi ,  Takashi Sato ,  Junichi Horikawa

发明人： Masato Kobayashi ,  Osamu Nozawa ,  Hisao Kawai ,  Keiji Moroishi ,  Takashi Sato ,  Junichi Horikawa

IPC分类号： G11B5/66 ,  G11B5/73 ,  G11B5/851 ,  C23C14/34

CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/851

摘要： A method of manufacturing a magnetic recording medium by using an in-line sputtering apparatus to successively form, on a substrate, at least one underlying layer, a first magnetic CoPt-based film, a nonmagnetic intermediate film, and a second magnetic CoPt-based film. The underlying film and/or the nonmagnetic film, which are in contact with the first magnetic film, are deposited at a low sputtering power between 100 and 1000 watts to improve the magnetic properties of the magnetic recording medium. Low power sputtering is also effective to improve the distribution of difference of the crystal lattice spacings between the nonmagnetic intermediate film and the first magnetic film and between the underlying layer and the first magnetic film.

公开(公告)号：US5954927A

公开(公告)日：1999-09-21

申请号：US917112

申请日：1997-08-25

申请人： Masato Kobayashi ,  Osamu Nozawa ,  Hisao Kawai ,  Keiji Moroishi ,  Takashi Sato ,  Junichi Horikawa

发明人： Masato Kobayashi ,  Osamu Nozawa ,  Hisao Kawai ,  Keiji Moroishi ,  Takashi Sato ,  Junichi Horikawa

IPC分类号： G11B5/66 ,  G11B5/73 ,  G11B5/851 ,  C23C14/34

CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/851

摘要： A method of manufacturing a magnetic recording medium by using an in-line sputtering apparatus to successively form, on a substrate, at least one underlying layer, a first magnetic CoPt-based film, a nonmagnetic intermediate film, and a second magnetic CoPt-based film. The underlying film and/or the nonmagnetic film, which are in contact with the first magnetic film, are deposited at a low sputtering power between 100 and 1000 watts to improve the magnetic properties of the magnetic recording medium. Low power sputtering is also effective to improve the distribution of difference of the crystal lattice spacings between the nonmagnetic intermediate film and the first magnetic film and between the underlying layer and the first magnetic film.

摘要翻译： 一种使用在线溅射装置制造磁记录介质的方法，在衬底上依次形成至少一个下层，第一磁性CoPt基膜，非磁性中间膜和第二磁性CoPt基 电影。 与第一磁性膜接触的下面的薄膜和/或非磁性薄膜以低至1000瓦特的低溅射功率沉积，以提高磁记录介质的磁特性。 低功率溅射对于改善非磁性中间膜和第一磁性膜之间以及下层和第一磁性膜之间的晶格间距的差异的分布也是有效的。

公开(公告)号：US20090215247A1

公开(公告)日：2009-08-27

申请号：US12434637

申请日：2009-05-02

申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

IPC分类号： H01L21/304

CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

摘要翻译： 在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

公开(公告)号：US07998793B2

公开(公告)日：2011-08-16

申请号：US12434637

申请日：2009-05-02

申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

IPC分类号： H01L21/00

CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

公开(公告)号：US20080138962A1

公开(公告)日：2008-06-12

申请号：US11632993

申请日：2004-07-22

申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

IPC分类号： H01L21/304

CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 通过照明装置（7a）和（7b）的晶片。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

公开(公告)号：US10026968B2

公开(公告)日：2018-07-17

申请号：US14000569

申请日：2012-01-04

申请人： Masaki Horikita ,  Kunchan Lee ,  Yasuaki Wakizaka ,  Takashi Sato

发明人： Masaki Horikita ,  Kunchan Lee ,  Yasuaki Wakizaka ,  Takashi Sato

IPC分类号： H01M4/88 ,  H01M4/90 ,  H01M8/1018

CPC分类号： H01M4/8882 ,  H01M4/8825 ,  H01M4/9008 ,  H01M4/9016 ,  H01M4/9083 ,  H01M2008/1095

摘要： A method for producing a fuel cell electrode catalyst, including a step (I) of bringing an aqueous solution of a transition metal compound (1) into contact with ammonia and/or ammonia water to generate a precipitate (A) containing an atom of the transition metal, a step (II) of mixing at least the precipitate (A), an organic compound (B), and a liquid medium (C) to obtain a catalyst precursor liquid, and a step (IV) of subjecting the solid in the catalyst precursor liquid to heat treatment at a temperature of 500 to 1200° C. to obtain an electrode catalyst; a portion or the entirety of the transition metal compound (1) being a compound containing a transition metal element of group 4 or group 5 of the periodic table; and the organic compound (B) being at least one selected from sugars and the like.

公开(公告)号：US09818495B2

公开(公告)日：2017-11-14

申请号：US13988966

申请日：2011-09-14

申请人： Takashi Sato

发明人： Takashi Sato

IPC分类号： G21C13/10 ,  G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C15/18 ,  G21F9/02

CPC分类号： G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C13/10 ,  G21C15/18 ,  G21F9/02 ,  Y02E30/40

摘要： A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

公开(公告)号：US09653994B2

公开(公告)日：2017-05-16

申请号：US13215035

申请日：2011-08-22

申请人： Katsumi Taguchi ,  Takashi Sato

发明人： Katsumi Taguchi ,  Takashi Sato

IPC分类号： G01R31/00 ,  H02M3/158 ,  H02M1/36

CPC分类号： H02M3/158 ,  H02M1/36

摘要： A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.