公开(公告)号：US07783265B2

公开(公告)日：2010-08-24

申请号：US12314644

申请日：2008-12-15

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H04B1/44

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

摘要翻译： 提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。 开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45， 场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。 导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。 相邻栅电极之间的距离比较宽部分的宽度窄。 电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

公开(公告)号：US20080073671A1

公开(公告)日：2008-03-27

申请号：US11979565

申请日：2007-11-06

申请人： Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

发明人： Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L21/8252 ,  H01L27/0605

摘要： The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

摘要翻译： 本发明将用作射频模块中的开关元件的HEMT元件小型化。 单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。 栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。 因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

公开(公告)号：US06787817B2

公开(公告)日：2004-09-07

申请号：US10318244

申请日：2002-12-13

申请人： Hiroyuki Takazawa ,  Shinichiro Takatani ,  Masao Yamane ,  Masayoshi Kobayashi

发明人： Hiroyuki Takazawa ,  Shinichiro Takatani ,  Masao Yamane ,  Masayoshi Kobayashi

IPC分类号： H01L310328

CPC分类号： H01L29/66462 ,  H01L29/0657 ,  H01L29/7783

摘要： The present invention provides a semiconductor device for high frequency application having a high breakdown voltage and the method of manufacturing thereof. A region including a first conductivity type high impurity concentration semiconductor and a region including a first conductivity type low impurity concentration semiconductor are provided from an ohmic layer side at the side far from a semiconductor substrate of the end surface of a barrier layer opposite the semiconductor substrate and between the ohmic layer and a gate electrode. The sheet impurity concentration of the region including a first conductivity type low impurity concentration semiconductor is set to be lower than that between the bottom surface of the gate electrode at the side of the semiconductor substrate and the end surface of the channel layer opposite the semiconductor substrate. The sheet impurity concentration of the region including a first conductivity type high impurity concentration semiconductor is set to be higher than that of the region including a first conductivity type low impurity concentration semiconductor.

摘要翻译： 本发明提供一种具有高击穿电压的高频应用的半导体器件及其制造方法。 包括第一导电型高杂质浓度半导体的区域和包括第一导电型低杂质浓度半导体的区域从远离半导体衬底的阻挡层的端面的半导体衬底的一侧的欧姆层侧提供 并且在欧姆层和栅电极之间。 包括第一导电型低杂质浓度半导体的区域的片状杂质浓度被设定为低于半导体衬底侧的栅电极的底表面和与半导体衬底相对的沟道层的端面之间的片状杂质浓度 。 将包括第一导电型高杂质浓度半导体的区域的片状杂质浓度设定为高于包含第一导电型低杂质浓度半导体的区域的片状杂质浓度。

公开(公告)号：US06576937B2

公开(公告)日：2003-06-10

申请号：US09863343

申请日：2001-05-24

申请人： Hiroyuki Takazawa ,  Tohru Oka ,  Isao Ohbu ,  Yoshinori Imamura

发明人： Hiroyuki Takazawa ,  Tohru Oka ,  Isao Ohbu ,  Yoshinori Imamura

IPC分类号： H01L310328

CPC分类号： H01L29/7371 ,  H03F3/60

摘要： A semiconductor device including a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7×1022 cm−3. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.

摘要翻译： 一种半导体器件，包括具有包含铟的半导体的发射极层的双极晶体管和形成在发射极层的保护环的表面上的含有氧和氧的保护绝缘膜，其中该保护绝缘膜具有密度 的氧气小于7×1022厘米-3。 该半导体器件防止性能恶化并确保功率放大器的高性能。