公开(公告)号：US20230165057A1

公开(公告)日：2023-05-25

申请号：US17975402

申请日：2022-10-27

Applicant: LG Display Co., Ltd.

Inventor： Younghyun KO ,  ChanYong JEONG ,  KyungChul OK

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/3272 ,  H01L27/1225

Abstract: A thin film transistor, a thin film transistor substrate including the thin film transistor and a display device are provided. The thin film transistor includes a first active layer, a first auxiliary gate electrode and a first gate electrode, wherein the first active layer includes a first channel portion, a first connection portion that is in contact with one side of the first channel portion, and a second connection portion that is in contact with the other side of the first channel portion.

公开(公告)号：US20220130944A1

公开(公告)日：2022-04-28

申请号：US17387342

申请日：2021-07-28

Applicant: LG DISPLAY CO., LTD.

Inventor： Younghyun KO ,  ChanYong JEONG

IPC: H01L27/32 ,  H01L51/56

Abstract: A thin film transistor array substrate comprises a panel including the thin film transistor array substrate, and an electronic device including the panel that includes a conductive auxiliary layer disposed on the substrate, a gate electrode and first and second electrodes that are disposed on the conductive auxiliary layer and spaced apart from one another, a gate insulating film disposed on the gate electrode, and an active layer disposed on or over the gate insulating film and the first and second electrodes, and including a first region, a second region spaced apart from the first region, a first auxiliary region surrounding the first region, and a second auxiliary region surrounding the second region, where an electrical resistance of each of the first auxiliary region and the second auxiliary region is lower than that of the channel region and higher than that of each of the first and second regions.

公开(公告)号：US20210183975A1

公开(公告)日：2021-06-17

申请号：US17122811

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK

IPC: H01L27/32

Abstract: A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.

公开(公告)号：US20210183898A1

公开(公告)日：2021-06-17

申请号：US17113845

申请日：2020-12-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  Dohyung LEE ,  JuHeyuck BAECK

IPC: H01L27/12

Abstract: Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.

公开(公告)号：US20200176603A1

公开(公告)日：2020-06-04

申请号：US16502312

申请日：2019-07-03

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.