公开(公告)号：US20240222518A1

公开(公告)日：2024-07-04

申请号：US18540557

申请日：2023-12-14

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  YoungHyun KO ,  DoHyung LEE ,  HongRak CHOI ,  ChanYong JEONG

IPC: H01L29/786 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L29/78633 ,  H01L29/78645 ,  H10K59/1213

Abstract: Embodiments of the present disclosure relate to a display device, which in more detail includes a substrate, a first gate electrode on the substrate, a first gate insulating film on the first gate electrode, an oxide semiconductor layer on the first gate insulating film, a second gate insulating film on the oxide semiconductor layer, a second gate electrode on the second gate insulating film, a first interface layer between the first gate insulating film and the oxide semiconductor layer, and a second interface layer between the second gate insulating film and the oxide semiconductor layer, wherein the first interface layer and the second interface layer contain mutually-different amounts of oxygen, thereby being able to provide a transistor structure having high reliability.

公开(公告)号：US20210193839A1

公开(公告)日：2021-06-24

申请号：US17115603

申请日：2020-12-08

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US20240188331A1

公开(公告)日：2024-06-06

申请号：US18376565

申请日：2023-10-04

Applicant: LG Display Co., Ltd.

Inventor： HongRak CHOI ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  ChanYong JEONG

IPC: H10K59/121 ,  G09G3/32

CPC classification number: H10K59/1216 ,  G09G3/32 ,  H10K59/1213 ,  G09G2300/0842

Abstract: A display panel includes a substrate, a first storage capacitor electrode disposed on the substrate, a buffer layer disposed on the first storage capacitor electrode, an active layer disposed on the buffer layer and including a first area, a second area, and a channel area disposed between the first area and the second area, a gate insulation film disposed on the active layer, a gate electrode disposed on the gate insulation film and overlapping with the channel area, an inter-layer insulation film disposed on the gate electrode, and a metal layer disposed on the inter-layer insulation film, wherein the first area and the second area of the active layer are conductive areas, and wherein a conductive auxiliary layer overlapping with at least a portion of each of the first area and the second area and not overlapping with the channel area is included on the substrate, thereby mitigating the step in the area where the storage capacitor electrodes are disposed to prevent a short circuit.

公开(公告)号：US20200184896A1

公开(公告)日：2020-06-11

申请号：US16690815

申请日：2019-11-21

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  KwangIl CHUN

IPC: G09G3/3266 ,  H01L27/12 ,  G09G3/3241

Abstract: A display device and a signal inversion device are provided. A display device includes: a display panel including: sub-pixels, and scan lines respectively connected to each of the sub-pixels, and light emission control lines respectively connected to each of the sub-pixels, a scan driver circuit for outputting respective scan signals to the scan lines, and a light emission control driver circuit for outputting respective light emission control signals to the light emission control lines, the light emission control driver circuit including: a resistance device electrically connected between: a first voltage node for receiving a first voltage, and an output node electrically connected to the light emission control lines, and a transistor electrically connected between the output node and a second voltage node for receiving a second voltage that is different from the first voltage, wherein an on/off operation of the transistor is controlled according to an input signal.

公开(公告)号：US20230014588A1

公开(公告)日：2023-01-19

申请号：US17950024

申请日：2022-09-21

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US20220209019A1

公开(公告)日：2022-06-30

申请号：US17563887

申请日：2021-12-28

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor can include a first gate electrode, an active layer including a channel portion, and a second gate electrode. The active layer is between the first gate electrode and the second gate electrode, and at least a portion of the first gate electrode does not overlap with the second gate electrode. Further, at least a portion of the second gate electrode does not overlap with the first gate electrode, and the channel portion overlaps with at least one of the first gate electrode and the second gate electrode. In addition, a first portion of the channel portion can overlaps with one of the first gate electrode and the second gate electrode, and a second portion of the channel portion can overlap with a remaining one of the first gate electrode and the second gate electrode that is not overlapped by the first portion of the channel portion.

公开(公告)号：US20220029029A1

公开(公告)日：2022-01-27

申请号：US17498246

申请日：2021-10-11

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US20200212221A1

公开(公告)日：2020-07-02

申请号：US16519577

申请日：2019-07-23

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.

公开(公告)号：US20240090276A1

公开(公告)日：2024-03-14

申请号：US18236225

申请日：2023-08-21

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  Younghyun KO ,  JuHeyuck BAECK

IPC: H10K59/126 ,  H10K59/131

CPC classification number: H10K59/126 ,  H10K59/131

Abstract: A display panel include a data signal line for supplying a data signal; a scan signal line for supplying a scan signal; and a subpixel connected to the data signal line and the scan signal line and including a first transistor including a first active layer, a first source electrode connected to one side of the first active layer, a first drain electrode connected to another side of the first active layer, and a first gate electrode overlapping with the first active layer, overlapping with all or at least a portion of the first source electrode, and overlapping with all or at least a portion of the first drain electrode, and are capable of preventing the exposure of the first transistor to light or hydrogen, and thereby preventing a decrease in characteristics of the first transistor due to light or hydrogen.

公开(公告)号：US20210183975A1

公开(公告)日：2021-06-17

申请号：US17122811

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK

IPC: H01L27/32

Abstract: A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.