公开(公告)号：US20220208094A1

公开(公告)日：2022-06-30

申请号：US17469682

申请日：2021-09-08

Applicant: LG Display Co., Ltd.

Inventor： YongHo JANG ,  Younghyun KO

IPC: G09G3/3233 ,  G09G3/20 ,  H01L27/32

Abstract: The present specification provides a display device and a driving method thereof performing sampling for sensing a sampling voltage of a driving transistor using a fast mode in which a driving transistor operates by a sampling voltage formed in one storage capacitor, and data writing using the slow mode in which the driving transistor is operated by a data voltage formed in another storage capacitor.

公开(公告)号：US20240188331A1

公开(公告)日：2024-06-06

申请号：US18376565

申请日：2023-10-04

Applicant: LG Display Co., Ltd.

Inventor： HongRak CHOI ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  ChanYong JEONG

IPC: H10K59/121 ,  G09G3/32

CPC classification number: H10K59/1216 ,  G09G3/32 ,  H10K59/1213 ,  G09G2300/0842

Abstract: A display panel includes a substrate, a first storage capacitor electrode disposed on the substrate, a buffer layer disposed on the first storage capacitor electrode, an active layer disposed on the buffer layer and including a first area, a second area, and a channel area disposed between the first area and the second area, a gate insulation film disposed on the active layer, a gate electrode disposed on the gate insulation film and overlapping with the channel area, an inter-layer insulation film disposed on the gate electrode, and a metal layer disposed on the inter-layer insulation film, wherein the first area and the second area of the active layer are conductive areas, and wherein a conductive auxiliary layer overlapping with at least a portion of each of the first area and the second area and not overlapping with the channel area is included on the substrate, thereby mitigating the step in the area where the storage capacitor electrodes are disposed to prevent a short circuit.

公开(公告)号：US20190206971A1

公开(公告)日：2019-07-04

申请号：US16216560

申请日：2018-12-11

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan KIM ,  Younghyun KO

IPC: H01L27/32 ,  G09G3/3291

Abstract: An organic light emitting display panel and an organic light emitting display apparatus using the same are disclosed, in which a switching transistor and a driving transistor are provided on their respective layers different from each other. To this end, the organic light emitting display panel comprises a substrate partitioned by a plurality of pixels, a driving transistor provided in a first pixel of the pixels and provided on the substrate in a top gate type, a first insulating film for covering the driving transistor, a switching transistor provided on the first insulating film in a top gate type, a second insulating film for covering the first insulating film and the switching transistor, a planarization film provided on the second insulating film, and an organic light emitting diode provided on the planarization film and connected with a driving first conductor of the driving transistor.

公开(公告)号：US20240215314A1

公开(公告)日：2024-06-27

申请号：US18458848

申请日：2023-08-30

Applicant: LG Display Co., Ltd.

Inventor： Younghyun KO ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/12 ,  H10K59/126

CPC classification number: H10K59/1213 ,  H10K59/1201 ,  H10K59/1216 ,  H10K59/126

Abstract: Disclosed is a thin film transistor substrate including a first thin film transistor having a first gate electrode, a first active layer, a first source electrode, and a first drain electrode, and a second thin film transistor having a second gate electrode, a second active layer with a pattern different from a pattern of the first active layer, a second source electrode, and a second drain electrode. The first active layer includes a first lower active layer overlapping the first gate electrode and a first upper active layer disposed on the first lower active layer and not overlapping the first gate electrode. The second active layer includes a second lower active layer overlapping the second gate electrode and a second upper active layer disposed on the second lower active layer and overlapping the second gate electrode. A display apparatus including the same thin film transistor substrate is also disclosed.

公开(公告)号：US20230111218A1

公开(公告)日：2023-04-13

申请号：US17963101

申请日：2022-10-10

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  Younghyun KO ,  SeungChan CHOI ,  Jaeman JANG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.

公开(公告)号：US20220399464A1

公开(公告)日：2022-12-15

申请号：US17751975

申请日：2022-05-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Younghyun KO ,  SeungChan CHOI ,  Min-Gu KANG ,  Jaeman JANG

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the second source electrode and connected to the second active layer, and the conductive material layer is connected to the second source electrode and overlaps the second channel portion. Also, a display device comprising the thin film transistor substrate is provided.

公开(公告)号：US20250063890A1

公开(公告)日：2025-02-20

申请号：US18798111

申请日：2024-08-08

Applicant: LG Display Co., Ltd.

Inventor： Younghyun KO ,  JuHeyuck BAECK ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/126

Abstract: A thin film transistor substrate includes a substrate; an active layer on the substrate and including an active hole; and a gate electrode on the active layer. The active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length. The active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.

公开(公告)号：US20250048739A1

公开(公告)日：2025-02-06

申请号：US18783662

申请日：2024-07-25

Applicant: LG DISPLAY CO., LTD.

Inventor： ChanYong JEONG ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  HongRak CHOI ,  Dohyun KWAK

IPC: H01L27/12 ,  H01L25/16

Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.

公开(公告)号：US20240162239A1

公开(公告)日：2024-05-16

申请号：US18381525

申请日：2023-10-18

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  Younghyun KO ,  HongRak CHOI

IPC: H01L27/12 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L21/02414 ,  H01L27/1218 ,  H01L27/1225 ,  H10K59/1213

Abstract: Discussed are a display panel and a display device including thin film transistors having high reliability and a high current producing characteristic. In one example, the display panel includes a first active layer disposed on a substrate and including a first channel region, a second active layer overlapping a portion of the first active layer and including a second channel region not overlapping the first channel region of the first active layer, first and second electrodes disposed in respective portions of the first and second active layers, respectively, and spaced apart from each other, a gate insulating layer disposed in respective portions of upper surfaces of the first and second active layers, and a third electrode disposed on the gate insulating layer.

公开(公告)号：US20230140193A1

公开(公告)日：2023-05-04

申请号：US17977864

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： Sungju CHOI ,  JungSeok SEO ,  Younghyun KO ,  Jaeyoon PARK ,  Seoyeon IM ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.