公开(公告)号：US10290658B2

公开(公告)日：2019-05-14

申请号：US15828207

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon Koo ,  SeHee Park ,  Kwanghwan Ji ,  PilSang Yun ,  Jaeyoon Park ,  HongRak Choi

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

Abstract: Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.