中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

25 records (took 0.019 seconds)

    Thin-film transistor array substrate and electronic device including the same
    3.
    发明授权
    Thin-film transistor array substrate and electronic device including the same 有权

    公开(公告)号：US10943546B2

    公开(公告)日：2021-03-09

    申请号：US16694674

    申请日：2019-11-25

    Applicant: LG DISPLAY CO., LTD.

    Inventor： InTak Cho ,  PilSang Yun ,  Jeyong Jeon ,  Jiyong Noh ,  SeHee Park

    IPC: G09G3/3291 ,  G09G3/3266 ,  H01L27/32

    Abstract: An electronic device includes a panel including first and second transistors and a driver circuit driving the panel. The first transistor includes a first electrode disposed on a substrate, a first insulating film disposed on the substrate and having an open area, a second electrode disposed on the first insulating film and overlapping the first electrode, and a first active layer disposed on the first and second electrodes. The second transistor includes third and fourth electrodes which are disposed to space apart from, and on a same layer as, the second electrode, and between which the open area is disposed, and a second active layer disposed on the third and fourth electrodes and across the open area.

    Electronic device
    5.
    发明授权
    Electronic device 有权

    公开(公告)号：US12178090B2

    公开(公告)日：2024-12-24

    申请号：US16923444

    申请日：2020-07-08

    Applicant: LG Display Co., Ltd.

    Inventor： SeHee Park ,  InTak Cho ,  PilSang Yun

    IPC: H10K59/131 ,  G09G3/3291 ,  H10K59/124

    Abstract: Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

    Display device comprising thin film transistors and method for manufacturing the same
    6.
    发明授权
    Display device comprising thin film transistors and method for manufacturing the same 有权

    公开(公告)号：US11678518B2

    公开(公告)日：2023-06-13

    申请号：US17344903

    申请日：2021-06-10

    Applicant: LG Display Co., Ltd.

    Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

    IPC: H10K59/121 ,  H10K59/131 ,  H01L27/12 ,  H10K59/12 ,  H01L27/32

    CPC classification number: H01L27/3262 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1262 ,  H01L27/3276 ,  H01L2227/323

    Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

    Display apparatus comprising different types of thin film transistors and method for manufacturing the same
    8.
    发明授权
    Display apparatus comprising different types of thin film transistors and method for manufacturing the same 有权

    公开(公告)号：US10978499B2

    公开(公告)日：2021-04-13

    申请号：US16525482

    申请日：2019-07-29

    Applicant: LG Display Co., Ltd.

    Inventor： Jaeman Jang ,  SeHee Park ,  DaeHwan Kim ,  PilSang Yun

    IPC: H01L27/12 ,  H01L27/32

    Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

Patent Agency Ranking