公开(公告)号：US06515300B2

公开(公告)日：2003-02-04

申请号：US09781397

申请日：2001-02-13

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： H01L2904

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

公开(公告)号：US6060714A

公开(公告)日：2000-05-09

申请号：US12491

申请日：1998-01-23

申请人： John Z. Z. Zhong ,  Willem den Boer ,  Young H. Byun

发明人： John Z. Z. Zhong ,  Willem den Boer ,  Young H. Byun

IPC分类号： H01L27/146 ,  H01L31/115 ,  G01T1/24

CPC分类号： H01L27/14676

摘要： This invention is related to a radiation image (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable interface barrier layer is provided between an array of collector electrodes and a photoconductor layer so as to simplify the process for manufacturing the imager and to improve image uniformity. In certain embodiments, the barrier layer is a negative resist. In certain embodiments, the barrier layer and an insulating layer over the TFTs may be of the same photo-imageable material.

摘要翻译： 本发明涉及包括薄膜晶体管（TFT）阵列的放射线图像（例如X射线成像仪）及其制造方法。 在集电极阵列和光电导体层之间设置可光致成像的界面阻挡层，以简化制造成像器的工艺并提高图像均匀性。 在某些实施方案中，阻挡层是负抗蚀剂。 在某些实施例中，TFT上的阻挡层和绝缘层可以是相同的可光成像材料。

公开(公告)号：US5926236A

公开(公告)日：1999-07-20

申请号：US199047

申请日：1998-11-24

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Vijayen S. Veerasamy ,  Yiwei Lu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Vijayen S. Veerasamy ,  Yiwei Lu

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  G02F1/1365 ,  G02F1/136

CPC分类号： G02F1/133514 ,  G02F1/1365 ,  G09G3/367 ,  G02F1/136209 ,  G02F1/136227 ,  G09G2300/0895

摘要： A backlit transmissive liquid crystal display including non-linear resistive thin film diodes (TFDs). Select address lines on the active substrate provide both conventional address line functionality, as well as acting as one of the electrodes for each thin film diode. Two such diodes are provided in each pixel in certain embodiments. Still further, black matrix material is provided between the aforesaid address line material and the substrate so as to form rows of stacks on the active substrate. The thin film diode semi-insulating material, the address line material, and the black matrix material are patterned together in a single step to form elongated rows (or columns) on the active substrate. In such a manner, the display has reduced ambient light reflections, and reduce photosensitivity. Furthermore, because the pixel electrode, which also functions as the top TFD electrode in each pixel, overlaps both the select lines and portions of the color filter, a high pixel aperture ratio of at least about 70% is provided. The TFDs may be MIM diodes in certain embodiments.

摘要翻译： 背光透射型液晶显示器，包括非线性电阻薄膜二极管（TFD）。 在有源基板上选择地址线提供常规的地址线功能，以及用作每个薄膜二极管的电极之一。 在某些实施例中，在每个像素中提供两个这样的二极管。 此外，黑色矩阵材料设置在上述地址线材料和衬底之间，以在活性衬底上形成堆叠行。 薄膜二极管半绝缘材料，地址线材料和黑矩阵材料在一个步骤中被图案化在一起以在活性基板上形成细长的行（或列）。 以这种方式，显示器减少了环境光反射，降低了光敏性。 此外，由于也用作每个像素中的顶部TFD电极的像素电极与选择线和滤色器的两部分重叠，因此提供至少约70％的高像素孔径比。 在某些实施例中，TFD可以是MIM二极管。