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公开(公告)号:US20130199165A1
公开(公告)日:2013-08-08
申请号:US13539800
申请日:2012-07-02
申请人: Tomoo KAWASE , Mikio Ishihara
发明人: Tomoo KAWASE , Mikio Ishihara
IPC分类号: F01N3/28
CPC分类号: F01N3/2828 , F01N3/101 , F01N3/2013 , F01N2240/16 , Y02T10/22 , Y02T10/26
摘要: An electrically heated catalyst device has a cylindrical outer skin part and a cell formation part. A pair of electrodes formed on the outer skin park faces relative to each other in a radial direction of the honeycomb structural body. An electrode terminal is formed on the corresponding electrode in an outer radial direction of the honeycomb structural body. A length edge line of each electrode is inclined to a virtual reference line at a predetermined angle. The virtual reference line is a virtual line defined on the outer circumferential surface of the outer skin part and is parallel to the axial direction of the honeycomb structural body. The electrode terminals are formed at a predetermined interval in the axial direction of the honeycomb structural body to make an angle of less than 180° when viewed from one end surface perpendicular to the axial direction of the honeycomb structural body.
摘要翻译: 电加热的催化剂装置具有圆柱形外皮部分和细胞形成部分。 形成在外皮公园上的一对电极在蜂窝结构体的径向上相对于彼此面对。 在蜂窝结构体的外径向上的相应电极上形成电极端子。 每个电极的长度边缘线以预定角度倾斜到虚拟参考线。 虚拟参考线是限定在外皮部分的外周表面上并且平行于蜂窝结构体的轴向的虚拟线。 当从与蜂窝结构体的轴向垂直的一个端面观察时,电极端子沿蜂窝结构体的轴向以预定的间隔形成为小于180°的角度。
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公开(公告)号:US20110221076A1
公开(公告)日:2011-09-15
申请号:US12907468
申请日:2010-10-19
申请人: Tsuyoshi TAKAYAMA , Yukio Yasuda , Hajime Katou , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
发明人: Tsuyoshi TAKAYAMA , Yukio Yasuda , Hajime Katou , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
IPC分类号: H01L23/48
CPC分类号: H01L23/142 , H01L23/492 , H01L24/29 , H01L24/32 , H01L24/33 , H01L2224/29076 , H01L2224/29101 , H01L2224/2919 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/351 , H01L2924/00
摘要: A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.
摘要翻译: 根据本发明的半导体器件包括:作为半导体元件的功率半导体元件; 用于接合半导体元件的上表面和下表面的接合部分; 以及通过所述接合部从上下接合到所述功率半导体元件的金属板,其中所述接合部包括设置在所述半导体元件和所述金属板之间的网状金属体以及嵌入所述网状金属体的接合构件。
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