Sealed force sensor with etch stop layer

    公开(公告)号:US11965787B2

    公开(公告)日:2024-04-23

    申请号:US17860941

    申请日:2022-07-08

    Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

    Integrated piezoresistive and piezoelectric fusion force sensor

    公开(公告)号:US11754451B2

    公开(公告)日:2023-09-12

    申请号:US18081255

    申请日:2022-12-14

    CPC classification number: G01L1/16 G01L1/18 G01L5/0028 B81B3/0072

    Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

    INTEGRATED PIEZORESISTIVE AND PIEZOELECTRIC FUSION FORCE SENSOR

    公开(公告)号:US20230184601A1

    公开(公告)日:2023-06-15

    申请号:US18081255

    申请日:2022-12-14

    CPC classification number: G01L1/16 G01L1/18 G01L5/0028 B81B3/0072

    Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

    Temperature coefficient of offset compensation for force sensor and strain gauge

    公开(公告)号:US11579028B2

    公开(公告)日:2023-02-14

    申请号:US16757225

    申请日:2018-10-17

    Abstract: MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.

    Integrated fingerprint and force sensor

    公开(公告)号:US11423686B2

    公开(公告)日:2022-08-23

    申请号:US16634495

    申请日:2018-07-25

    Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) sensor including both fingerprint and force sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs either piezoresistive or piezoelectric sensing elements for detecting force and also capacitive or ultrasonic sensing elements for detecting fingerprint patterns. Both force and fingerprint sensing elements are electrically connected to integrated circuits on the same chip. The integrated circuits can amplify, digitize, calibrate, store, and/or communicate force values and/or fingerprint patterns through output pads to external circuitry.

    Sealed force sensor with etch stop layer

    公开(公告)号:US11385108B2

    公开(公告)日:2022-07-12

    申请号:US16761373

    申请日:2018-11-02

    Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

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