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公开(公告)号：US20240247986A1
公开(公告)日：2024-07-25
申请号：US18597341
申请日：2024-03-06
申请人： NextInput, Inc.
CPC分类号： G01L1/18 , B81B3/0021 , B81C1/00595 , G01L1/26 , B81B2203/0127 , B81C2201/014
摘要： An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
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公开(公告)号：US11946817B2
公开(公告)日：2024-04-02
申请号：US17676477
申请日：2022-02-21
申请人： NEXTINPUT, INC.
CPC分类号： G01L1/18 , B81B7/02 , B81C1/00246 , G01L1/14 , G01L1/16 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81B2207/07 , B81C2201/013 , B81C2203/0109 , B81C2203/0714 , B81C2203/0728
摘要： In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.
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公开(公告)号：US20220268648A1
公开(公告)日：2022-08-25
申请号：US17676477
申请日：2022-02-21
申请人： NEXTINPUT, INC.
摘要： In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.
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4.发明授权公开(公告)号：US11221263B2
公开(公告)日：2022-01-11
申请号：US16632795
申请日：2018-07-19
申请人： NEXTINPUT, INC.
发明人： Julius Minglin Tsai , Dan Benjamin
IPC分类号： G01L1/22 , H01L41/053 , H01L41/113 , G01L1/16 , B81B3/00 , B81B7/00 , G01L1/18
摘要： Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including a sensor die and a strain transfer layer. The MEMS force sensor employs piezoresistive or piezoelectric strain gauges for strain sensing where the strain is transferred through the strain transfer layer, which is disposed on the top or bottom side of the sensor die. In the case of the top side strain transfer layer, the MEMS force sensor includes mechanical anchors. In the case of the bottom side strain transfer layer, the protection layer is added on the top side of the sensor die for bond wire protection.
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公开(公告)号：US20230184603A1
公开(公告)日：2023-06-15
申请号：US18103465
申请日：2023-01-30
申请人： NextInput, Inc.
发明人： Julius Minglin Tsai , Dan Benjamin
CPC分类号： G01L1/2281 , G01L1/16 , G01L1/18
摘要： MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young’s modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.
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公开(公告)号：US20230016531A1
公开(公告)日：2023-01-19
申请号：US17860941
申请日：2022-07-08
申请人： NextInput, Inc.
摘要： An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
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公开(公告)号：US11255737B2
公开(公告)日：2022-02-22
申请号：US16485016
申请日：2018-02-09
申请人： NEXTINPUT, INC.
摘要： In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.
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公开(公告)号：US20210190608A1
公开(公告)日：2021-06-24
申请号：US16757225
申请日：2018-10-17
申请人： NEXTINPUT, INC.
发明人： Julius Minglin Tsai , Dan Benjamin
摘要： MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.
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公开(公告)号：US20190383675A1
公开(公告)日：2019-12-19
申请号：US16485026
申请日：2018-02-09
申请人： NEXTINPUT, INC.
摘要： Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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公开(公告)号：US11898918B2
公开(公告)日：2024-02-13
申请号：US18103465
申请日：2023-01-30
申请人： NextInput, Inc.
发明人： Julius Minglin Tsai , Dan Benjamin
CPC分类号： G01L1/2281 , G01L1/16 , G01L1/18
摘要： MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.
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