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公开(公告)号：US20230165026A1
公开(公告)日：2023-05-25
申请号：US17905938
申请日：2021-03-08
Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU
CPC classification number: H10K50/115 , B82Y30/00 , B82Y40/00 , C09K11/62 , C09K11/64 , C09K11/88 , C09K11/56 , H01L33/502
Abstract: Provided is a luminescent material having excellent durability. The luminescent material contains second semiconductor nanoparticles that contain first semiconductor nanoparticles and a deposit arranged on surfaces of the first semiconductor nanoparticles, and that emit light when irradiated with light; and a metal compound in which the second semiconductor nanoparticles are embedded. The first semiconductor nanoparticles contain M1, M2, and Z. M1 is at least one selected from the group consisting of Ag, Cu, Au and alkali metals, and contains at least Ag. M2 is at least one selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga. Z contains at least one selected from the group consisting of S, Se, and Te. The deposit is substantially composed of at least one selected from the group consisting of Al, Ga, In, Tl and alkali metals, and at least one selected from the group consisting of S, O, Se, and Te. The metal compound contains at least one of Zn and Ga, and at least one of S and O.
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公开(公告)号：US20230120918A1
公开(公告)日：2023-04-20
申请号：US18053057
申请日：2022-11-07
Applicant: OSAKA UNIVERSITY , National University Corporation Tokai National Higher Education and Research System , NICHIA CORPORATION
Inventor： Susumu KUWABATA , Taro UEMATSU , Kazutaka WAJIMA , Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Daisuke OYAMATSU
Abstract: Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125 □C to 175 □C, and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125 □C to 175 □C for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.
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Patent Agency Ranking
公开(公告)号：US20220089452A1
公开(公告)日：2022-03-24
申请号：US17310482
申请日：2020-02-07
Applicant: National University Corporation Tokai National Higher Education and Research System , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU
Abstract: Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.
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24.发明申请公开(公告)号：US20210179936A1
公开(公告)日：2021-06-17
申请号：US17176599
申请日：2021-02-16
Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Hiroki YAMAUCHI , Chie MIYAMAE , Yuki MORI , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU
Abstract: Semiconductor nanoparticles are provided. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. An Ag content is 10 mol % to 30 mol %, a total content of the at least one of In and Ga is 15 mol % to 35 mol %, and an Se content is 35 mol % to 55 mol % in the semiconductor nanoparticles. The semiconductor nanoparticles emit light having an emission spectrum with a peak emission wavelength in a range of 500 nm to 900 nm, and a half bandwidth of 250 meV or less upon irradiation with light in a wavelength range of 350 nm to less than 500 nm.
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公开(公告)号：US20200295227A1
公开(公告)日：2020-09-17
申请号：US16815359
申请日：2020-03-11
Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Yuki MORI , Hiroki YAMAUCHI , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU
Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.
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26.发明申请公开(公告)号：US20200006601A1
公开(公告)日：2020-01-02
申请号：US16489214
申请日：2018-02-28
Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Marino KISHI , Chie MIYAMAE , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU , Kenta NIKI
Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
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27.发明申请公开(公告)号：US20180066183A1
公开(公告)日：2018-03-08
申请号：US15695639
申请日：2017-09-05
Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Marino KISHI , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU
Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.
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