公开(公告)号：US20190173432A1

公开(公告)日：2019-06-06

申请号：US16131682

申请日：2018-09-14

Applicant: NXP B.V.

Inventor： Mark Pieter Van Der Heijden ,  Gerben Willem De Jong ,  Xin Yang

IPC: H03F1/22 ,  H03F1/20 ,  H03F1/30 ,  H03F3/343

CPC classification number: H03F1/223 ,  H03F1/20 ,  H03F1/302 ,  H03F3/19 ,  H03F3/3432

Abstract: A bias circuit for a bipolar RF amplifier is described. The bias circuit includes a current source coupled to a bias network. The bias network supplies a base current to the transistors in the amplifier circuit of the bipolar RF amplifier. The bias circuit includes a buffer coupled to the bias network and to the bipolar RF amplifier. The buffer provides additional base current to the amplifier circuit of bipolar RF amplifier and sinks avalanche current generated by the amplifier circuit of the bipolar RF amplifier.