公开(公告)号：US06943128B2

公开(公告)日：2005-09-13

申请号：US10362513

申请日：2001-08-22

申请人： Toshiaki Chiyo ,  Naoki Shibata

发明人： Toshiaki Chiyo ,  Naoki Shibata

IPC分类号： H01L21/263 ,  H01L21/322 ,  H01L33/00 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L33/0095 ,  H01L21/263 ,  H01L21/3228

摘要： To lower the electrical resistance of a p-type semiconductor or the operation voltage of a light-emitting/light-receiving semiconductor device. An ion-plasma-type electron-beam irradiation apparatus 100 generates wide-area-radiation electron beams. The thus-generated electron beams are radiated to the outside through a thin metallic plate 108 formed on the outer surface of a beam extraction window 107. A p-type semiconductor is disposed below the beam extraction window 107 such that the p-type semiconductor is disposed about 20 mm away from the electron extraction window so as to be almost parallel to the metallic plate 108. When the surface of the p-type semiconductor is irradiated with electron beams by use of this apparatus, the electrical resistance of the p-type semiconductor can be effectively lowered within a short period of time; i.e., within about three minutes, which is considerably shorter than the time required in the case where a conventional electron-beam irradiation apparatus is employed. No particular limitation is imposed on the area of the beam extraction window 107, and thus wide-area-radiation electron beams are generated, and as a result, scanning with electron beams is not required to be repeated over a long period of time.

摘要翻译： 降低p型半导体的电阻或发光/受光半导体器件的工作电压。 离子等离子体型电子束照射装置100产生广域辐射电子束。 由此产生的电子束通过形成在光束提取窗口107的外表面上的薄金属板108辐射到外部。 p型半导体设置在光束提取窗口107的下方，使得p型半导体布置在离电子提取窗口大约20mm处，以便几乎平行于金属板108。 当利用该装置对电子束照射p型半导体的表面时，可以在短时间内有效地降低p型半导体的电阻; 即在大约三分钟内，这比使用传统电子束照射装置的情况所需的时间短得多。 对光束提取窗107的面积没有特别限制，因此产生广域辐射电子束，结果，不需要长时间重复用电子束进行扫描。

公开(公告)号：US06861275B2

公开(公告)日：2005-03-01

申请号：US10413384

申请日：2003-04-15

申请人： Toshiaki Chiyo

发明人： Toshiaki Chiyo

IPC分类号： H01L33/32 ,  H01L33/42 ,  H01L21/00

CPC分类号： H01L33/0095

摘要： A method of producing a Group III nitride compound semiconductor device, has the following steps of: forming an n-type layer on a substrate; forming a layer containing a light emitting layer on the n-type layer; forming a p-type layer being doped with a p-type impurity on the layer; etching at least a portion of the n-type layer and at least a portion of the layer to reveal at least a part of the n-type layer and an end surface of the layer; forming a p-electrode on a surface side of the p-type layer; forming an n-electrode on the revealed part of the n-type layer; irradiating the p-type layer with an electron beam to make resistance of the p-type layer low; and acidizing at least the revealed end surface of the layer after the electron beam irradiating step.

摘要翻译： 制备III族氮化物半导体器件的方法具有以下步骤：在衬底上形成n型层; 在所述n型层上形成含有发光层的层; 在所述层上形成掺杂有p型杂质的p型层; 蚀刻所述n型层的至少一部分和所述层的至少一部分以露出所述n型层和所述层的端面的至少一部分; 在p型层的表面侧形成p电极; 在n型层的露出部分上形成n电极; 用电子束照射p型层，使p型层的电阻降低; 并且在电子束照射步骤之后至少酸化所述层的显露端表面。