Method for reproducing optical disk
    21.
    发明授权
    Method for reproducing optical disk 失效
    光盘再现方法

    公开(公告)号:US5909412A

    公开(公告)日:1999-06-01

    申请号:US977206

    申请日:1997-11-24

    摘要: In a method for reproducing an optical disk of the present invention, address information of an optical disk, provided with tracking guides composed of (1) a wobbling groove wobbled in accordance with address information and (2) a normal groove which is not wobbled, is reproduced. The wobbling groove and the normal groove are alternately provided in a radius direction of the optical disk. When carrying out recording and reproducing of the optical disk, three beams composed of one main beam and two sub beams are used. The three beams are projected so that (a) the sub beams are respectively on the wobbling groove and the normal groove and (b) the main beam is on a land between the wobbling groove and the normal groove. The address information is found from reflected light of one of the sub beams. The above arrangement allows respective central portions of the sub beams to track the tracking guides. Therefore, even in the case where the optical disk is tilted or vibrated, the sub beams do not deviate totally off the tracking guides, thereby permitting to stably reproduce the address information.

    摘要翻译: 在本发明的再现光盘的方法中,具有由(1)根据地址信息摆动的摆动槽和(2)未摆动的正常槽构成的跟踪引导件的光盘的地址信息, 被转载。 在光盘的半径方向交替设置摆动槽和法线槽。 当执行光盘的记录和再现时,使用由一个主光束和两个子光束组成的三个光束。 这三个光束被投影,使得(a)子光束分别位于摆动槽和普通槽上,(b)主光束位于摆动槽和正常槽之间的焊盘上。 从一个子光束的反射光中找到地址信息。 上述布置允许子光束的各个中心部分跟踪跟踪引导件。 因此,即使在光盘倾斜或振动的情况下,子光束也不完全偏离跟踪引导件,从而允许稳定地再现地址信息。

    Magneto-optic memory medium and a method for producing the same
    23.
    发明授权
    Magneto-optic memory medium and a method for producing the same 失效
    磁光存储介质及其制造方法

    公开(公告)号:US5643687A

    公开(公告)日:1997-07-01

    申请号:US358682

    申请日:1994-12-19

    摘要: A magneto-optic memory medium including a first dielectric layer having a first main surface and a second main surface; a second dielectric layer for covering the first main surface of the first dielectric layer; and a magneto-optic memory layer for covering the second dielectric layer. The first dielectric layer is formed of an oxide having a refractive index in the range of 2.4 or more and 3.5 or less, and the second dielectric layer is formed of a material containing no oxygen. The magneto-optic memory medium is produced by the steps of forming a first layer by performing reactive sputtering in an atmosphere of a first sputter gas using a material containing a first element as a target; switching the first sputter gas to a second sputter gas; forming a second layer on the first layer by performing reactive sputtering in an atmosphere of the second sputter gas using a material containing the first element as a target; and forming a magneto-optic memory layer on the second dielectric layer.

    摘要翻译: 一种磁光存储介质,包括具有第一主表面和第二主表面的第一介电层; 第二电介质层,用于覆盖第一介电层的第一主表面; 以及用于覆盖第二介电层的磁光存储层。 第一电介质层由折射率在2.4以上且3.5以下的氧化物形成,第二电介质层由不含氧的材料形成。 磁光存储介质通过以下步骤制造:通过使用包含第一元素作为靶的材料在第一溅射气体的气氛中进行反应溅射来形成第一层; 将第一溅射气体切换到第二溅射气体; 通过使用包含第一元素作为目标的材料在第二溅射气体的气氛中进行反应溅射,在第一层上形成第二层; 以及在所述第二电介质层上形成磁光存储层。

    Magneto-optical storage media
    24.
    发明授权
    Magneto-optical storage media 有权
    磁光存储介质

    公开(公告)号:US06707766B2

    公开(公告)日:2004-03-16

    申请号:US10099968

    申请日:2002-03-19

    IPC分类号: G11B1100

    CPC分类号: G11B11/10593 G11B11/10584

    摘要: A magneto-optical storage medium includes an interference layer, a magnetic domain expansion layer, an intermediate layer, a magnetic masking layer, a recording layer, and a protection layer which are sequentially formed on a substrate. The magnetic domain expansion layer produces a smaller frictional force due to wall coercivity than do the other magnetic layers. The intermediate layer has the Curie temperature TC2 which is lower than those of the other magnetic layers. The magnetic masking layer is in a perpendicular magnetization state at temperatures that are in a proximity of TC2, and changes into an in-plane magnetization state at temperatures that are higher than the proximity of TC2. The recording layer produces a higher coercive force than those produced by the magnetic domain expansion layer at room temperature.

    摘要翻译: 磁光存储介质包括依次形成在基板上的干涉层,磁畴扩展层,中间层,磁屏蔽层,记录层和保护层。 与其它磁性层相比,磁畴扩展层由于壁矫顽力而产生较小的摩擦力。 中间层的居里温度TC2低于其他磁性层的居里温度TC2。 磁屏蔽层在接近TC2的温度下处于垂直磁化状态,并且在高于TC2的接近度的温度下变为面内磁化状态。 记录层产生比在室温下由磁畴扩展层产生的矫顽力更高的矫顽力。

    Magneto-optical recording medium
    25.
    发明授权
    Magneto-optical recording medium 失效
    磁光记录介质

    公开(公告)号:US06338911B1

    公开(公告)日:2002-01-15

    申请号:US09429082

    申请日:1999-10-29

    IPC分类号: G11B566

    摘要: A reproduction layer, a magnetic domain extending layer, an intermediate layer, and a recording layer are formed in this order. The magnetic domain extending layer, the intermediate layer, and the recording layer are exchange-coupled. The intermediate layer has a Curie temperature lower than that of any other magnetic layer. A non-magnetic intermediate layer is formed between the reproduction layer and the magnetic domain extending layer. Upon reproduction, magnetization information in the recording layer is transferred to and extended in the magnetic domain extending layer, where an extended magnetic domain is formed. The reproduction layer is magnetostatically coupled with the magnetic domain extending layer, so that the extended magnetic domain is transferred to the reproduction layer. This makes it possible to provide a magneto-optical recording medium characterized in moving of magnetic domain walls and extension of magnetic domains in good conditions, and increased signal intensity with a simpler structure.

    摘要翻译: 依次形成再生层,磁畴延伸层,中间层和记录层。 磁畴延伸层,中间层和记录层是交换耦合的。 中间层的居里温度低于任何其他磁性层的居里温度。 在再现层和磁畴延伸层之间形成非磁性中间层。 在再现时,记录层中的磁化信息被转移到扩展磁畴的磁畴延伸层中并扩展。 再现层与磁畴延伸层磁静电耦合,从而将扩展磁畴转移到再现层。 这使得可以提供一种磁光记录介质,其特征在于在良好的条件下磁畴壁的移动和磁畴的延伸,并且以更简单的结构增加信号强度。

    Magneto-optical recording medium having a signal reproducing region of
the reproducing layer larger than the record bit in the recording layer
    26.
    发明授权
    Magneto-optical recording medium having a signal reproducing region of the reproducing layer larger than the record bit in the recording layer 失效
    磁光记录介质具有比记录层中的记录位大的再现层的信号再现区域

    公开(公告)号:US5982715A

    公开(公告)日:1999-11-09

    申请号:US116328

    申请日:1998-07-15

    摘要: A magneto-optical recording medium with a reproducing layer that exhibits in-plane magnetization at room temperature and that comes to exhibit perpendicular magnetization as temperature rises. The second shielding layer is used to block the magnetization of record bits other than a record bit to be reproduced from being copied on a signal reproducing area in the reproducing layer. Consequently, even in the case of high-density record bits in the recording layer, only the magnetization of the record bit to be reproduced is copied on the reproducing layer. Therefore, the application of the magneto-optical recording medium makes it possible to produce superior reproducing signals even in the case where the records bits with high density are formed on the recording layer.

    摘要翻译: 一种具有再现层的磁光记录介质,其在室温下表现出平面内的磁化,并且随着温度升高而呈现垂直磁化强度。 第二屏蔽层用于阻止除被再现的记录位之外的记录位的磁化被复制在再现层中的信号再现区上。 因此,即使在记录层中的高密度记录位的情况下,只有将再现的记录位的磁化复制在再现层上。 因此,即使在记录层上形成具有高密度的记录位的情况下,也可以应用磁光记录介质来产生优良的再现信号。

    Magneto-optical recording medium
    27.
    发明授权
    Magneto-optical recording medium 有权
    磁光记录介质

    公开(公告)号:US06477120B1

    公开(公告)日:2002-11-05

    申请号:US09451260

    申请日:1999-11-30

    IPC分类号: G11B1100

    摘要: In order to provide a magneto-optical recording medium which can select a single recording magnetic domain in the recording layer accurately and expand and transfer the same to the reproducing layer, the magneto-optical recording medium is arranged in the following manner. That is, the magnetization direction of the reproducing layer is in-plane at room temperature and shifts to perpendicular at or above a predetermined temperature Ttrans.. The recording layer is a magnetic layer which is magneto-statically coupled to the reproducing layer and shows the perpendicular magnetization up to its Curie temperature. The magnetic mask layer is provided between the recording layer and reproducing layer, and the magnetization thereof is reduced to 0 (zero) at or above a predetermined temperature (Tm) which is at or above Ttrans.. The magnetization of the magnetic mask layer is larger than that of the recording layer at least in a range between room temperature and Ttrans..

    摘要翻译: 为了提供可以精确地选择记录层中的单个记录磁畴并将其扩展并传送到再现层的磁光记录介质,磁光记录介质以如下方式布置。 也就是说,再现层的磁化方向在室温下处于平面,并在预定温度T trans以上移动到垂直方向。记录层是磁性层,磁性层与再现层磁耦合,并显示出 垂直磁化强度达其居里温度。 磁记录层设置在记录层和再现层之间,其磁化强度在等于或高于Ttrans的预定温度(Tm)以上或者高于Ttrans的0(零)。磁屏蔽层的磁化强度为 大于记录层的至少在室温和Ttrans之间的范围内。

    Magneto-optical storage media
    28.
    发明授权

    公开(公告)号:US06388956B1

    公开(公告)日:2002-05-14

    申请号:US09440929

    申请日:1999-11-16

    IPC分类号: G11B1100

    CPC分类号: G11B11/10593 G11B11/10584

    摘要: A magneto-optical storage medium includes an interference layer, a magnetic domain expansion layer, an intermediate layer, a magnetic masking layer, a recording layer, and a protection layer which are sequentially formed on a substrate. The magnetic domain expansion layer produces a smaller frictional force due to wall coercivity than do the other magnetic layers. The intermediate layer has the Curie temperature TC2 which is lower than those of the other magnetic layers. The magnetic masking layer is in a perpendicular magnetization state at temperatures that are in a proximity of TC2, and changes into an in-plane magnetization state at temperatures that are higher than the proximity of TC2. The recording layer produces a higher coercive force than those produced by the magnetic domain expansion layer at room temperature.

    Composite semiconductor device
    30.
    发明授权
    Composite semiconductor device 有权
    复合半导体器件

    公开(公告)号:US08766275B2

    公开(公告)日:2014-07-01

    申请号:US13574993

    申请日:2010-12-28

    IPC分类号: H01L31/0256

    CPC分类号: H01L27/0605 H01L27/0629

    摘要: This composite semiconductor device has a normally-on first field effect transistor and a normally-off second field effect transistor connected in series between first and second terminals, gates of the first and second field effect transistors being connected to second and third terminals, respectively, and N diodes being connected in series in a forward direction between a drain and a source of the second field effect transistor. Therefore, a drain-source voltage (Vds) of the second field effect transistor can be restricted to a voltage not higher than a withstand voltage of the second field effect transistor.

    摘要翻译: 该复合半导体器件具有在第一和第二端子之间串联连接的常开第一场效应晶体管和常关第二场效应晶体管,第一和第二场效应晶体管的栅极分别连接到第二和第三端子, 并且N个二极管在第二场效应晶体管的漏极和源极之间沿正向串联连接。 因此,第二场效应晶体管的漏极 - 源极电压(Vds)可以被限制在不高于第二场效应晶体管的耐受电压的电压。