Abstract:
A method for producing an optoelectronic component may include forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier, providing a covering body with a second adhesion layer, which comprises a second metallic material, applying a first alloy to one of the two adhesion layers, the melting point of the first alloy being so low that the first alloy is liquid, coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct contact with the liquid first alloy, and reacting at least part of the liquid first alloy chemically with the metallic materials, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.
Abstract:
In at least one embodiment, an organic optoelectronic component, which is preferably an organic light emitting diode, includes a first electrode layer, a second electrode layer and an organic layer sequence situated between the electrode layers. Furthermore, the component includes a light-transmissive current confinement layer, which is fitted over the whole area between the first electrode layer and the organic layer sequence, such that the organic layer sequence is spaced apart from the first electrode layer. The current confinement layer is produced continuously from a common starting material and is structured by treatment and/or by action of temperature into at least one conductive region having a high electrical conductivity and into at least one insulating region having a low electrical conductivity. These electrical conductivities differ from one another by at least a factor of 10.
Abstract:
A method for producing an optoelectronic component includes forming an optoelectronic layer structure including a functional layer structure above a carrier, forming a frame structure including a first metallic material on the optoelectronic layer structure such that a region above the functional layer structure is free of the frame structure and that the frame structure surrounds the region, forming an adhesion layer including a second metallic material above a covering body, applying a liquid first alloy to the optoelectronic layer structure and/or to the adhesion layer of the covering body in the region, coupling the covering body to the optoelectronic layer structure such that the adhesion layer is coupled to the frame structure and the liquid first alloy is in direct contact with the adhesion layer and the frame structure, and reacting part of the first alloy chemically with the metallic materials of the frame structure and the adhesion layer.
Abstract:
A method for producing an optoelectronic component may include forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier, providing a covering body with a second adhesion layer, which comprises a second metallic material, applying a first alloy to one of the two adhesion layers, the melting point of the first alloy being so low that the first alloy is liquid, coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct contact with the liquid first alloy, and reacting at least part of the liquid first alloy chemically with the metallic materials, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.