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21.发明授权公开(公告)号：US11196950B2
公开(公告)日：2021-12-07
申请号：US16506693
申请日：2019-07-09
发明人： Keiji Mabuchi , Sohei Manabe , Lindsay Grant
摘要： An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.
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公开(公告)号：US11095842B2
公开(公告)日：2021-08-17
申请号：US16523850
申请日：2019-07-26
发明人： Keiji Mabuchi , Sohei Manabe , Lindsay Grant
IPC分类号： H04N5/3745 , H01L27/146 , H04N5/378 , H04N5/357
摘要： An image sensor has an array of pixel blocks, and each pixel block having associated shutter transistors with each coupled to transfer an image signal comprising a charge dependent on light exposure of a selected pixel onto an image storage capacitor of a plurality of image storage capacitors associated with the pixel block, the image storage capacitors of the pixel block configured to be read through a differential amplifier into an analog to digital converter. The differential amplifier of each pixel block receives a second input from a single reset-sampling capacitor associated with the pixel block. The single reset-sampling capacitor is loaded when the pixels of the pixel block are reset.
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公开(公告)号：US20200235158A1
公开(公告)日：2020-07-23
申请号：US16255194
申请日：2019-01-23
发明人： Xianmin Yi , Jingming Yao , Philip Cizdziel , Eric Webster , Duli Mao , Zhiqiang Lin , Jens Landgraf , Keiji Mabuchi , Kevin Johnson , Sohei Manabe , Dyson H. Tai , Lindsay Grant , Boyd Fowler
IPC分类号： H01L27/146 , H01L31/107 , H01L31/02 , H01L27/148 , G01S17/10
摘要： A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.
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公开(公告)号：US20190355778A1
公开(公告)日：2019-11-21
申请号：US15984136
申请日：2018-05-18
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson Tai , Lindsay Grant
IPC分类号： H01L27/146 , H04N5/378 , H04N5/359
摘要： An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
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公开(公告)号：US20190115388A1
公开(公告)日：2019-04-18
申请号：US15786874
申请日：2017-10-18
发明人： Young Woo Jung , Lindsay Grant , Dyson Tai , Vincent Venezia , Wei Zheng
IPC分类号： H01L27/148 , H01L27/146
摘要： An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.
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