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公开(公告)号：US11862651B2
公开(公告)日：2024-01-02
申请号：US16777060
申请日：2020-01-30
发明人： Alireza Bonakdar , Zhiqiang Lin , Lindsay Grant
IPC分类号： H01L27/146 , G02B3/00 , G02B5/20
CPC分类号： H01L27/14629 , G02B3/0037 , G02B5/201 , G02B5/208 , H01L27/1463 , H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14645 , H01L27/14685
摘要： A light-trapping image sensor includes a pixel array and a lens array. The pixel array is formed in and on a semiconductor substrate and including photosensitive pixels each including a reflective material forming a cavity around a portion of semiconductor material to at least partly trap light that has entered the cavity. The cavity has a ceiling at a light-receiving surface of the semiconductor substrate, and the ceiling forms an aperture for receiving the light into the cavity. The lens array is disposed on the pixel array. Each lens of the lens array is aligned to the aperture of a respective cavity to focus the light into the cavity through the aperture.
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公开(公告)号：US20200099878A1
公开(公告)日：2020-03-26
申请号：US16141584
申请日：2018-09-25
发明人： Gang Chen , Duli Mao , Dyson Tai , Lindsay Grant
IPC分类号： H04N5/376 , H01L27/146 , H04N5/378
摘要： An image sensor pixel comprises a first charge storage node configured to have a first charge storage electric potential; a second charge storage node configured to have a second charge storage electric potential and receive charge from the first charge storage node, wherein the second charge storage electric potential is greater than the first charge storage electric potential; and a transfer circuit coupled between the first and the second charge storage nodes, wherein the transfer circuit comprises at least three transfer regions, wherein: a first transfer region is proximate to the first charge storage node and configured to have a first transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; a second transfer region is coupled between the first and a third transfer region and configured to have a second transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; and the third transfer region is proximate to the third charge storage node and configured to have a third transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential. Charges are fully transferred from the first charge storage node to the second charge storage node after a plurality of transfer signal pulses.
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公开(公告)号：US10418408B1
公开(公告)日：2019-09-17
申请号：US16016057
申请日：2018-06-22
发明人： Yuanwei Zheng , Chia-Chun Miao , Gang Chen , Yin Qian , Duli Mao , Dyson H. Tai , Lindsay Grant
IPC分类号： H01L27/146 , H04N5/378
摘要： An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.
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公开(公告)号：US10181490B2
公开(公告)日：2019-01-15
申请号：US15478085
申请日：2017-04-03
发明人： Kazufumi Watanabe , Chih-Wei Hsiung , Dyson Tai , Lindsay Grant
IPC分类号： H01L27/146 , H04N9/04 , H04N5/378
摘要： A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
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公开(公告)号：US11323608B2
公开(公告)日：2022-05-03
申请号：US16597901
申请日：2019-10-10
发明人： Chin Poh Pang , Chen-Wei Lu , Shao-Fan Kao , Chun-Yung Ai , Yin Qian , Dyson Tai , Qingwei Shan , Lindsay Grant
IPC分类号： H04N5/232 , H01L27/146
摘要： An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.
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公开(公告)号：US11029397B2
公开(公告)日：2021-06-08
申请号：US15958364
申请日：2018-04-20
IPC分类号： G01S7/48 , G01S7/4863 , G01S7/4865 , G01S17/36 , G01S7/4914 , G01S7/497 , G01S17/894
摘要： A time-of-flight (TOF) sensor includes a light source structured to emit light and a plurality of avalanche photodiodes. The TOF sensor also includes a plurality of pulse generators, where individual pulse generators are coupled to individual avalanche photodiodes in the plurality of avalanche photodiodes. Control circuitry is coupled to the light source, the plurality of avalanche photodiodes, and the plurality of pulse generators, to perform operations. Operations may include emitting the light from the light source, and receiving the light reflected from an object with the plurality of avalanche photodiodes. In response to receiving the light with the plurality of avalanche photodiodes, a plurality of pulses may be output from the individual pulse generators corresponding to the individual photodiodes that received the light. And, in response to outputting the plurality of pulses, a timing signal may be output when the plurality of pulses overlap temporally.
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公开(公告)号：US10964738B2
公开(公告)日：2021-03-30
申请号：US16149544
申请日：2018-10-02
发明人： Gang Chen , Yuanwei Zheng , Qin Wang , Cunyu Yang , Guannan Chen , Duli Mao , Dyson Tai , Lindsay Grant , Eric Webster , Sing-Chung Hu
IPC分类号： H01L27/146 , H04N5/378 , H04N9/04
摘要： An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
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公开(公告)号：US10734434B2
公开(公告)日：2020-08-04
申请号：US15984136
申请日：2018-05-18
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson Tai , Lindsay Grant
IPC分类号： H01L27/146 , H04N5/359 , H04N5/378
摘要： An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
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公开(公告)号：US20200045223A1
公开(公告)日：2020-02-06
申请号：US16597901
申请日：2019-10-10
发明人： Chin Poh Pang , Chen-Wei Lu , Shao-Fan Kao , Chun-Yung Ai , Yin Qian , Dyson Tai , Qingwei Shan , Lindsay Grant
IPC分类号： H04N5/232 , H01L27/146
摘要： An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.
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公开(公告)号：US10304882B1
公开(公告)日：2019-05-28
申请号：US15828217
申请日：2017-11-30
发明人： Kazufumi Watanabe , Young Woo Jung , Chih-Wei Hsiung , Dyson Tai , Lindsay Grant
IPC分类号： H01L21/336 , H01L27/146 , H04N5/3745 , H01L29/10 , H01L29/78 , H01L29/49
摘要： An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
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