IMAGING DEVICE AND IMAGING SYSTEM
    21.
    发明申请

    公开(公告)号:US20210043689A1

    公开(公告)日:2021-02-11

    申请号:US17083376

    申请日:2020-10-29

    Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.

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