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公开(公告)号:US20210043689A1
公开(公告)日:2021-02-11
申请号:US17083376
申请日:2020-10-29
Inventor: TAKEYOSHI TOKUHARA , SANSHIRO SHISHIDO , YASUO MIYAKE , SHINICHI MACHIDA
IPC: H01L27/30
Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.
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公开(公告)号:US20190081107A1
公开(公告)日:2019-03-14
申请号:US16190363
申请日:2018-11-14
Inventor: MANABU NAKATA , MASUMI IZUCHI , SHINICHI MACHIDA , YASUNORI INOUE
CPC classification number: H01L27/307 , H01L27/146 , H01L27/14667 , H01L27/14669 , H01L51/0046 , H01L51/0061 , H01L51/0068 , H01L51/0069 , H01L51/0072 , H01L51/0073 , H01L51/0078 , H01L51/0084 , H01L51/4246 , H04N5/33 , H04N5/374 , H04N9/045 , H04N9/07
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges. The photoelectric converter includes: a first electrode; a light-transmitting second electrode; a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength; and a second photoelectric conversion layer disposed between the first photoelectric conversion layer and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength. The absolute value of the ionization potential of the first material is larger by at least 0.2 eV than the absolute value of the ionization potential of the second material.
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公开(公告)号:US20190081106A1
公开(公告)日:2019-03-14
申请号:US16188327
申请日:2018-11-13
Inventor: MANABU NAKATA , MASUMI IZUCHI , SHINICHI MACHIDA , YASUNORI INOUE
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.
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