公开(公告)号：US12055441B2

公开(公告)日：2024-08-06

申请号：US18335003

申请日：2023-06-14

申请人： STMICROELECTRONICS S.r.l.

发明人： Maria Eloisa Castagna ,  Giuseppe Bruno

IPC分类号： G01J5/16 ,  G01J5/00 ,  G01J5/20 ,  H01L27/146 ,  H04N5/33

CPC分类号： G01J5/16 ,  G01J5/20 ,  H01L27/14669 ,  H04N5/33 ,  G01J2005/0077

摘要： A thermographic sensor is proposed. The thermographic sensor includes a plurality of sensing elements each comprising at least one thermo-couple. The thermographic sensor is integrated on a semiconductor on insulator body that is patterned to define a grid suspended from a substrate; for each sensing element, the grid has a frame with the cold joint of the thermo-couple, a plate with the hot joint of the thermo-couple and one or more arms sustaining the plate from the frame. The frames include one or more conductive layers of thermally conductive material for thermally equalizing the cold joints with the substrate. Moreover, each sensing element may also include a processing circuit for the thermo-couple that is integrated on the corresponding frame. A thermographic device including the thermographic sensor and a corresponding signal processing circuit, and a system including one or more thermographic devices are also proposed.

公开(公告)号：US11990498B2

公开(公告)日：2024-05-21

申请号：US17156639

申请日：2021-01-25

申请人： Meridian Innovation Pte Ltd

发明人： Wan Chia Ang ,  Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

IPC分类号： G01J5/12 ,  B81C1/00 ,  G01J5/02 ,  G01J5/04 ,  G01J5/08 ,  G01J5/16 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/09

CPC分类号： H01L27/14669 ,  B81C1/00 ,  B81C1/00246 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/046 ,  G01J5/048 ,  G01J5/0853 ,  G01J5/12 ,  G01J5/16 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14649 ,  H01L31/0224 ,  H01L31/09 ,  B81C2203/0742 ,  G01J2005/123

摘要： A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

公开(公告)号：US11849597B2

公开(公告)日：2023-12-19

申请号：US17485737

申请日：2021-09-27

申请人： Samsung Electronics Co., Ltd.

发明人： Dong-Seok Leem ,  Rae Sung Kim ,  Hyesung Choi ,  Ohkyu Kwon ,  Changki Kim ,  Hwang Suk Kim ,  Bum Woo Park ,  Jae Jun Lee

IPC分类号： H01L27/146 ,  H10K39/32 ,  H10K30/20 ,  H10K30/30 ,  H10K50/11 ,  H10K101/40

CPC分类号： H10K39/32 ,  H01L27/14669 ,  H10K30/20 ,  H10K30/30 ,  H10K50/11 ,  H10K2101/40

摘要： A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

公开(公告)号：US20180324368A1

公开(公告)日：2018-11-08

申请号：US15770452

申请日：2016-10-12

申请人： IRLYNX

发明人： Sandrine OEUVRARD ,  Christophe MARTINSONS ,  Benoit TAEYMANS

IPC分类号： H04N5/33 ,  G02B5/10 ,  G02B13/14 ,  G02B17/00 ,  G03B17/17

CPC分类号： H04N5/33 ,  G02B5/10 ,  G02B13/14 ,  G02B17/002 ,  G02B17/06 ,  G02B23/06 ,  G02B27/1066 ,  G02B27/143 ,  G03B17/17 ,  G03B37/04 ,  G08B13/193 ,  G08B13/19626 ,  H01L27/14629 ,  H01L27/14669

摘要： The invention relates to an optical system with mirrors for an image sensor, comprising two symmetrical concave mirrors (20a, 20b) arranged in the same plane and having parallel optical axes (Oa, Ob); and an image sensor array (24) arranged in front of the mirrors and having two opposing edges which are respectively substantially adjacent to the optical axes of the two mirrors. The image sensor can be attached to an opaque mask (28) comprising, on the periphery of the image sensor, an entrance pupil (26) in front of each mirror (20), contained in the surface of the mirror extending beyond the image sensor.

公开(公告)号：US20180220097A1

公开(公告)日：2018-08-02

申请号：US15939323

申请日：2018-03-29

申请人： InVisage Technologies, Inc.

发明人： Edward Hartley Sargent ,  Jess Jan Young Lee ,  Hui Tian ,  Emanuele Mandelli

IPC分类号： H04N5/378 ,  H04N5/361 ,  H04N5/347 ,  H01L27/146 ,  H04N5/232 ,  G02B23/12 ,  H04N5/33 ,  G02B5/20

CPC分类号： H04N5/378 ,  G02B5/208 ,  G02B23/12 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14649 ,  H01L27/14665 ,  H01L27/14667 ,  H01L27/14669 ,  H04N5/23241 ,  H04N5/23245 ,  H04N5/33 ,  H04N5/347 ,  H04N5/361

摘要： Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.

公开(公告)号：US20170328779A1

公开(公告)日：2017-11-16

申请号：US15369702

申请日：2016-12-05

申请人： FLIR Systems, Inc.

发明人： Gregory A. Carlson ,  Alex Matson ,  Andrew Sharpe ,  Davey Beard ,  Paul Schweikert ,  Robert Simes

IPC分类号： G01J5/20 ,  G01J1/02 ,  H01L27/146 ,  H01L21/66 ,  G01J5/04 ,  G01J5/02 ,  G01J1/44 ,  H01L37/02

CPC分类号： G01J5/20 ,  G01J1/0204 ,  G01J1/44 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/023 ,  G01J5/046 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/204 ,  H01L22/14 ,  H01L22/32 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14669 ,  H01L27/14687 ,  H01L27/14698 ,  H01L37/02 ,  H04N5/2251 ,  H04N5/33 ,  Y10T29/49826

摘要： An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

公开(公告)号：US09766130B2

公开(公告)日：2017-09-19

申请号：US14822433

申请日：2015-08-10

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： G01J5/20 ,  G01J5/06 ,  H01L27/146 ,  H01L23/38

CPC分类号： G01J5/061 ,  H01L23/38 ,  H01L27/14669 ,  H01L2924/0002 ,  H01L2924/00

摘要： A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector having a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; and a contact layer comprising a doped semiconductor. A barrier layer is disposed between the photo absorbing layer and the contact layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

公开(公告)号：US20170191868A1

公开(公告)日：2017-07-06

申请号：US15465505

申请日：2017-03-21

申请人： FLIR SYSTEMS, INC.

发明人： Eric A. Kurth ,  Chris Chan ,  Kevin Peters ,  Patrick Franklin ,  Robert F. Cannata ,  James L. Dale ,  Tommy Marx ,  David Howard ,  Jefferson Rose ,  Michael DeBar

IPC分类号： G01J1/02 ,  H01L25/04 ,  H01L27/146 ,  G01J1/42 ,  G01J1/16

CPC分类号： G01J5/0245 ,  G01J5/20 ,  G01J2005/0077 ,  G01J2005/065 ,  G01J2005/202 ,  G01L21/12 ,  G01M3/002 ,  G01M3/34 ,  G01M3/38 ,  H01L25/042 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14669

摘要： A device is disclosed including a substrate and a floating blinded infrared detector and/or a shunted blinded infrared detector. The floating blinded infrared detector may include an infrared detector coupled to and thermally isolated from the substrate; and a blocking structure disposed above the infrared detector to block external thermal radiation from being received by the infrared detector; and wherein the blocking structure comprises a plurality of openings. The shunted blinded infrared detector may include an additional infrared detector coupled to the substrate; an additional blocking structure disposed above the infrared detector to block external thermal radiation from being received by the additional infrared detector; and a material that thermally couples the additional infrared detector to the substrate and the additional blocking structure. Methods for using and forming the device are also disclosed.

公开(公告)号：US09536917B2

公开(公告)日：2017-01-03

申请号：US14084276

申请日：2013-11-19

申请人： RAYTHEON COMPANY

发明人： Justin Gordon Adams Wehner ,  Edward P. Smith ,  Stephanie Bostwick

IPC分类号： H01L27/146 ,  H01L31/102 ,  H01L31/109 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/101

CPC分类号： H01L27/14629 ,  H01L27/14669 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/1013 ,  H01L31/109 ,  Y02E10/544

摘要： Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).

摘要翻译： 用于提供单色或多色光电探测器的方法和结构，利用腔谐振获得性能优势。 在一个示例中，辐射检测器（110）包括具有第一导电类型的半导体吸收层（210,410A，410B，610,810,1010,1030,1210,1230）以及响应于第一导电类型中的辐射的能带隙 耦合到所述吸收层（210,410A，41013,610,810,1010,1030,1210,1230）并且具有第二导电类型的半导体集电极层（220,630,830,1020,1040） 以及耦合到所述集电极层（220,630,820,1020,1040）并且具有第一反射镜（240）和第二反射镜（245）的谐振腔。

公开(公告)号：US09437646B2

公开(公告)日：2016-09-06

申请号：US13742195

申请日：2013-01-15

申请人： CANON KABUSHIKI KAISHA

发明人： Ryota Sekiguchi ,  Masahiro Okuda

IPC分类号： G01S13/89 ,  G01S13/02 ,  H01L27/146 ,  G01N21/3581 ,  G01S7/03 ,  G01S13/00 ,  G01S7/02 ,  H01Q1/36

CPC分类号： H01L27/14669 ,  G01N21/3581 ,  G01S7/024 ,  G01S7/032 ,  G01S13/003 ,  G01S13/0209 ,  G01S13/89 ,  H01Q1/36

摘要： A detecting device which detects electromagnetic waves includes an antennal configured to receive electromagnetic waves, and a plurality of semiconductor rectifying devices serially connected to the antenna, and connected in parallel to each other such that the polarity is aligned, so as to receive electromagnetic waves propagated from the antenna, wherein the plurality of semiconductor rectifying devices are each disposed at positions where the phase of electromagnetic waves propagated from the antenna is substantially the same phase.

摘要翻译： 检测电磁波的检测装置包括被配置为接收电磁波的天线以及与天线串联连接并且彼此并联连接的多个半导体整流装置，使得极性被对准，以便接收传播的电磁波 其中，所述多个半导体整流装置各自设置在从所述天线传播的电磁波的相位基本相同的位置处。