-
公开(公告)号：US20180315936A1
公开(公告)日：2018-11-01
申请号：US15957225
申请日：2018-04-19
Inventor： MASAYA HIRADE , YUKO KISHIMOTO , MANABU NAKATA
CPC classification number: H01L51/0094 , H01L27/307 , H01L51/0078 , H01L51/4253
Abstract: A photoelectric conversion film contains a compound represented by the following formula: where M represents Si or Sn, X represents O or S, and R1 to R14 each independently represent an alkyl group.
-
公开(公告)号：US20180227490A1
公开(公告)日：2018-08-09
申请号：US15871978
申请日：2018-01-15
Inventor： MANABU NAKATA , SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , SANSHIRO SHISHIDO , MASAAKI YANAGIDA , MASUMI IZUCHI
CPC classification number: H04N5/23245 , H01L27/307 , H04N5/2351 , H04N5/332 , H04N9/04553 , H04N9/07
Abstract: A method is for controlling an imaging device that allows switching of an operation mode between a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band. The method includes: determining whether ambient light includes near-infrared light based on information obtained in the first mode and information obtained in the second mode; and maintaining or changing the operation mode.
-
公开(公告)号：US20190081107A1
公开(公告)日：2019-03-14
申请号：US16190363
申请日：2018-11-14
Inventor： MANABU NAKATA , MASUMI IZUCHI , SHINICHI MACHIDA , YASUNORI INOUE
CPC classification number: H01L27/307 , H01L27/146 , H01L27/14667 , H01L27/14669 , H01L51/0046 , H01L51/0061 , H01L51/0068 , H01L51/0069 , H01L51/0072 , H01L51/0073 , H01L51/0078 , H01L51/0084 , H01L51/4246 , H04N5/33 , H04N5/374 , H04N9/045 , H04N9/07
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges. The photoelectric converter includes: a first electrode; a light-transmitting second electrode; a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength; and a second photoelectric conversion layer disposed between the first photoelectric conversion layer and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength. The absolute value of the ionization potential of the first material is larger by at least 0.2 eV than the absolute value of the ionization potential of the second material.
-
公开(公告)号：US20190081106A1
公开(公告)日：2019-03-14
申请号：US16188327
申请日：2018-11-13
Inventor： MANABU NAKATA , MASUMI IZUCHI , SHINICHI MACHIDA , YASUNORI INOUE
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.
-
5.发明申请公开(公告)号：US20190051781A1
公开(公告)日：2019-02-14
申请号：US16054205
申请日：2018-08-03
Inventor： MASAYA HIRADE , MANABU NAKATA , YUKO KISHIMOTO , HIRONORI KAJI , KATSUYUKI SHIZU , KATSUAKI SUZUKI
IPC: H01L31/055 , H01L31/0232 , C09K11/06
Abstract: A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, R1 to R10 each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of R1 to R10 bond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Ar1 is selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Ar1 with N in Formula (2).
-
Patent Agency Ranking
6.发明申请公开(公告)号：US20180227510A1
公开(公告)日：2018-08-09
申请号：US15873190
申请日：2018-01-17
Inventor： SHINICHI MACHIDA , MASASHI MURAKAMI , TAKEYOSHI TOKUHARA , MASAAKI YANAGIDA , SANSHIRO SHISHIDO , MANABU NAKATA , MASUMI IZUCHI
CPC classification number: H04N5/332 , H01L27/307 , H04N5/374 , H04N5/378 , H04N9/04553 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
-
公开(公告)号：US20150179977A1
公开(公告)日：2015-06-25
申请号：US14570015
申请日：2014-12-15
Inventor： YASUHISA INADA , TAKU HIRASAWA , MANABU NAKATA
IPC: H01L51/52
CPC classification number: H01L51/5262 , H01L51/5203 , H01L51/5218 , H01L51/5231 , H01L51/5271
Abstract: A light-emitting device includes: a light-emitting element including a transparent electrode, a reflecting electrode, and an organic layer that includes a light-emitting layer; a transparent multilayer body including a low-refractive-index layer and a high-refractive-index layer, the high-refractive-index layer being provided in contact with the transparent electrode; a first uneven structure at an interface between the low-refractive-index layer and the high-refractive-index layer, the first uneven structure including depressions and projections, a height of each of the projections relative to the depressions being 400 nm or more; and a second uneven structure at an interface between the reflecting electrode and the organic layer, the second uneven structure including depressions and projections, a height of each of the projections relative to the depressions in the second uneven structure being 20 nm or more and 100 nm or less.
Abstract translation: 发光装置包括：发光元件，其包括透明电极，反射电极和包括发光层的有机层; 包括低折射率层和高折射率层的透明多层体，所述高折射率层设置成与所述透明电极接触; 在低折射率层和高折射率层之间的界面处的第一不平坦结构，包括凹陷和突起的第一不平坦结构，每个凸起相对于凹陷的高度为400nm以上; 以及在反射电极和有机层之间的界面处的第二不平坦结构，所述第二凹凸结构包括凹陷和突起，每个凸起相对于第二凹凸结构中的凹陷的高度为20nm以上且100nm 或更少。
-
公开(公告)号：US20190267560A1
公开(公告)日：2019-08-29
申请号：US16274154
申请日：2019-02-12
Inventor： MASAYA HIRADE , MANABU NAKATA , KATSUYA NOZAWA , YASUNORI INOUE
Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.
-
9.发明申请公开(公告)号：US20180315934A1
公开(公告)日：2018-11-01
申请号：US15959097
申请日：2018-04-20
Inventor： MANABU NAKATA , YUKO KISHIMOTO , MASAYA HIRADE
IPC: H01L51/00 , H01L31/0224
CPC classification number: H01L51/0078 , C07F7/2224 , H01L31/022408 , H01L31/022475 , H01L51/0077 , H01L51/0094 , H01L51/42
Abstract: A composition contains a compound represented by the following formula: where M represents either of Si and Sn, R1 to R8 each independently represent an alkyl group containing three or less carbon atoms, and R9 to R14 each independently represent an alkyl group.
-
10.发明申请公开(公告)号：US20180227524A1
公开(公告)日：2018-08-09
申请号：US15872016
申请日：2018-01-16
Inventor： SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , MANABU NAKATA , SANSHIRO SHISHIDO , MASAAKI YANAGIDA , MASUMI IZUCHI
CPC classification number: H04N5/378 , H01L27/307 , H01L51/0046 , H01L51/4246 , H04N5/374 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.019 seconds)
