公开(公告)号：US20080035798A1

公开(公告)日：2008-02-14

申请号：US11502360

申请日：2006-08-11

申请人： Curt S. Kothera ,  Benjamin K.S. Woods ,  Jayant Sirohi ,  Norman M. Wereley ,  Peter C. Chen

发明人： Curt S. Kothera ,  Benjamin K.S. Woods ,  Jayant Sirohi ,  Norman M. Wereley ,  Peter C. Chen

IPC分类号： B64C9/22

CPC分类号： B64C3/54 ,  B63B1/248 ,  B63H25/382 ,  B64C3/48 ,  B64C9/00 ,  B64C13/28 ,  B64C27/615 ,  B64C2027/7266 ,  Y02T50/34

摘要： A fluid contact surface actuation system for a vehicle, including a first fluid contact surface constructed and arranged to act against a first fluid passing over the first fluid contact surface; and a first fluid actuator coupled to the first fluid contact surface to move the first fluid contact surface between a first position and a second position to enable control of the vehicle in a predetermined manner, the first fluid actuator having a first resilient bladder that receives a second fluid such that pressure of the second fluid moves the first bladder between a contracted configuration and an expanded configuration.

摘要翻译： 一种用于车辆的流体接触表面致动系统，包括构造和布置成抵靠经过第一流体接触表面的第一流体作用的第一流体接触表面; 以及联接到所述第一流体接触表面的第一流体致动器，以使所述第一流体接触表面在第一位置和第二位置之间移动，以使得能够以预定方式控制所述车辆，所述第一流体致动器具有第一弹性囊， 第二流体，使得第二流体的压力在收缩构型和膨胀构型之间移动第一囊。

公开(公告)号：US20080035788A1

公开(公告)日：2008-02-14

申请号：US11707052

申请日：2007-02-16

申请人： Curt S. Kothera ,  Benjamin K.S. Woods ,  Norman M. Wereley ,  Peter C. Chen ,  Edward A. Bubert

发明人： Curt S. Kothera ,  Benjamin K.S. Woods ,  Norman M. Wereley ,  Peter C. Chen ,  Edward A. Bubert

IPC分类号： B64C13/36

CPC分类号： B63B1/248 ,  B29K2995/0094 ,  B63H25/382 ,  B64C3/48 ,  B64C3/54 ,  B64C9/00 ,  B64C13/28 ,  B64C27/615 ,  B64C2027/7266 ,  Y02T50/34

摘要： An assembly for controlling a vehicle, including a fluid contact surface constructed and arranged to act against a fluid passing over the fluid contact surface; and a support structure coupled to the fluid contact surface. The support structure is constructed and arranged to expand or contract between a first position and a second position, such that a first dimension of the support structure changes during movement of the support structure between the first position and the second position, while a second dimension of the support structure remains substantially constant during the movement of the support structure between the first position and the second position.

摘要翻译： 一种用于控制车辆的组件，包括流体接触表面，该流体接触表面构造和布置成抵抗流过流体接触表面的流体; 以及耦合到流体接触表面的支撑结构。 支撑结构被构造和布置成在第一位置和第二位置之间膨胀或收缩，使得支撑结构的第一尺寸在支撑结构在第一位置和第二位置之间移动期间改变，而第二尺寸 在支撑结构在第一位置和第二位置之间的运动期间，支撑结构保持基本恒定。

公开(公告)号：US4125427A

公开(公告)日：1978-11-14

申请号：US718291

申请日：1976-08-27

申请人： Peter C. Chen ,  John K. Stewart, Jr. ,  Tuh-Kai Koo

发明人： Peter C. Chen ,  John K. Stewart, Jr. ,  Tuh-Kai Koo

IPC分类号： H01L29/78 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/06 ,  H01L21/312

CPC分类号： H01L29/66575 ,  H01L21/31111 ,  H01L21/32055 ,  Y10S438/928

摘要： An improvement of the prior art method of processing large scale integrated (LSI) semiconductors is disclosed, wherein an etching procedure, which was previously performed as the final processing step, is now done at an earlier stage to preclude damage to the surface of the wafer on which the active devices are formed. In the prior art method of fabricating an active device on a semiconductor wafer, an undesirable layer of field oxide manifests itself on the reverse side when the field oxide is grown on the obverse or principal side of the wafer. The prior processing philosophy was to allow the oxide layer to remain on the wafer until after the processing was completed and, as a final step, the undesired oxide coating was removed. This was done by carefully placing the wafer in a pool of etchant so that only the reverse side is etched. Since the wafer is only about 12 mils thick, the operator had to exercise extreme caution in placing the wafer in the etchant to prevent the etchant from creeping up the thickness dimension of the wafer and thus etching the obverse side. Our novel method contemplates modifying the processing steps of the prior art by removing the undesired field oxide before the circuits or active devices have been completely formed, when the wafer may be completely immersed in the etchant without damaging or etching areas on the active portion of the wafer.

摘要翻译： 公开了现有技术的大规模集成（LSI）半导体处理方法的改进，其中先前作为最终处理步骤执行的蚀刻步骤现在在较早的阶段进行，以防止损坏晶片表面 其上形成有源器件。 在半导体晶片上制造有源器件的现有技术方法中，当场氧化物生长在晶片的正面或主面上时，不利的场氧化物层本身在反面上表现出来。 先前的处理原理是允许氧化物层保留在晶片上，直到处理完成，并且作为最后的步骤，去除不需要的氧化物涂层。 这是通过将晶片小心地放置在蚀刻池中完成的，使得只有反面被蚀刻。 由于晶片厚度只有约12密耳，操作人员必须非常小心地将晶片放置在蚀刻液中，以防止蚀刻剂爬行晶片的厚度尺寸，从而蚀刻正面。 我们的新颖方法考虑通过在电路或有源器件已经完全形成之前去除不期望的场氧化物来修改现有技术的处理步骤，当晶片可以完全浸没在蚀刻剂中而不损坏或蚀刻在 晶圆。