FIB exposure of alignment marks in MIM technology
    21.
    发明申请
    FIB exposure of alignment marks in MIM technology 审中-公开
    MIM技术中FIB曝光对准标记

    公开(公告)号:US20050186753A1

    公开(公告)日:2005-08-25

    申请号:US10786187

    申请日:2004-02-25

    Abstract: A new and improved method for exposing alignment marks on a substrate by locally cutting through a metal or non-metal layer or layers sequentially deposited on the substrate above the alignment marks, using focused ion beam (FIB) technology. In a preferred embodiment, a method for exposing alignment marks on a substrate can be carried out by first providing a substrate that has multiple alignment marks provided thereon and at least one overlying opaque layer, typically but not necessarily metal, deposited on the substrate above the alignment marks. A focused ion beam is then directed against the overlying opaque layer or layers to cut through the layer or layers and expose the alignment marks on the substrate. A noble gas, preferably argon, is typically used as the ion source for the focused ion beam.

    Abstract translation: 一种新的和改进的方法,通过使用聚焦离子束(FIB)技术,通过局部切割穿过对准标记上方的基板上的金属或非金属层或层而在基板上曝光对准标记。 在优选实施例中,用于在衬底上曝光对准标记的方法可以通过首先提供其上设置有多个对准标记的衬底和沉积在衬底上方的至少一个上覆的不透明层(通常但不一定是金属) 对齐标记 然后将聚焦离子束定向到上覆的不透明层或层以切穿该层或者暴露衬底上的对准标记。 惰性气体,优选氩气通常用作聚焦离子束的离子源。

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