公开(公告)号：US20240036486A1

公开(公告)日：2024-02-01

申请号：US18337028

申请日：2023-06-18

申请人： FUJI ELECTRIC CO., LTD.

发明人： Kazuhiro KITAHARA ,  Naoko KODAMA

IPC分类号： G03F9/00

CPC分类号： G03F9/708 ,  G03F9/7088 ,  G03F9/7084

摘要： Provided is a manufacturing method of a semiconductor apparatus including: detecting a position by detecting positional deviation of the upper surface mark and the lower surface mark, by acquiring an upper surface image obtained by observing the upper surface mark from above the upper surface of the semiconductor substrate and a lower surface image obtained by observing the lower surface mark through the semiconductor substrate from above the upper surface of the semiconductor substrate; and forming an element by forming a semiconductor element in the semiconductor substrate, where in a top view in which the upper surface mark and the lower surface mark are projected onto a plane parallel to the upper surface, one of the upper surface mark and the lower surface mark is larger than an other, and the one entirely covers the other.

公开(公告)号：US20230408936A1

公开(公告)日：2023-12-21

申请号：US18182527

申请日：2023-03-13

申请人： Kioxia Corporation

发明人： Manabu TAKAKUWA

IPC分类号： G03F9/00 ,  H01L23/544 ,  H10B41/20 ,  H10B43/20

CPC分类号： G03F9/708 ,  G03F9/7076 ,  H01L23/544 ,  H10B41/20 ,  H10B43/20 ,  H01L2223/54426

摘要： A semiconductor structure body of an embodiment includes a stacked body. In the stacked body, a plurality of conductive layers and a plurality of insulating layers are alternately stacked, and a plurality of through holes penetrating the conductive layers and the insulating layers in the stacking direction are provided. In the interior of the stacked body, in a region corresponding to an identical pair of coordinates in a planar coordinate system intersecting the stacking direction, a plurality of identical alignment marks or deviation measurement marks are formed, with one or more stories each including a predetermined number of conductive layers and a predetermined number of insulating layers interposed therebetween.

公开(公告)号：US20190164900A1

公开(公告)日：2019-05-30

申请号：US16263451

申请日：2019-01-31

申请人： NIKON CORPORATION

发明人： Yuji SHIBA ,  Tomoharu FUJIWARA ,  Nobutaka MAGOME

IPC分类号： H01L23/544 ,  H01L21/762 ,  H01L21/308 ,  G03F9/00

CPC分类号： H01L23/544 ,  B82Y40/00 ,  G03F9/708 ,  H01L21/3086 ,  H01L21/76224 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A mark forming method includes: forming recessed portion on a mark formation area of a substrate; coating the recessed portion with a polymer layer containing a block copolymer, allowing the polymer layer in the recessed portion to form a self-assembled area; selectively removing a portion of the self-assembled area; and forming a positioning mark by using the self-assembled area from which the portion thereof has been removed.

公开(公告)号：US09726991B2

公开(公告)日：2017-08-08

申请号：US14764522

申请日：2014-03-06

申请人： ASML Netherlands B.V.

发明人： Johannes Jacobus Matheus Baselmans ,  Franciscus Godefridus Casper Bijnen ,  Daniëlle Elisabeth Maria Palmen

IPC分类号： G03F9/00 ,  G03F7/20 ,  G03F1/42 ,  G03F1/44

CPC分类号： G03F9/708 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70058

摘要： A patterning device, for use in forming a marker on a substrate by optical projection, the patterning device including a marker pattern having a density profile that is periodic with a fundamental spatial frequency corresponding to a desired periodicity of the marker to be formed. The density profile is modulated (such as sinusoidally) so as to suppress one or more harmonics of the fundamental frequency, relative to a simple binary profile having the fundamental frequency.

公开(公告)号：US09620458B2

公开(公告)日：2017-04-11

申请号：US14861591

申请日：2015-09-22

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Boxiu Cai ,  Yi Huang

IPC分类号： B44C1/22 ,  H01L23/544 ,  G02B5/18 ,  H01L21/3065 ,  H01L21/308 ,  G03F7/20

CPC分类号： H01L23/544 ,  G02B5/1819 ,  G02B5/1823 ,  G02B5/1857 ,  G02B27/4255 ,  G03F7/20 ,  G03F9/7076 ,  G03F9/708 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/3086 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; thrilling a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center along a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.

公开(公告)号：US09620358B2

公开(公告)日：2017-04-11

申请号：US14892972

申请日：2014-05-08

申请人： Sumitomo Electric Industries, Ltd.

发明人： Hideto Tamaso

IPC分类号： H01L21/02 ,  H01L21/027 ,  H01L29/16 ,  H01L23/544 ,  H01L29/66 ,  H01L29/04 ,  H01L21/66 ,  H01L29/40 ,  H01L21/00 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L21/02529 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0274 ,  H01L22/12 ,  H01L23/544 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/66068 ,  H01L29/7813 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a first silicon carbide layer having a first main surface and a second main surface. A first recess including a side portion and a bottom portion is formed in the first main surface of the first silicon carbide layer. A second silicon carbide layer is formed in contact with the first main surface, the side portion, and the bottom portion. An image of a second recess formed at a position facing the first recess of the fourth main surface is obtained. Alignment is performed based on the image of the second recess. The first main surface corresponds to a plane angled off relative to a {0001} plane. A ratio obtained by dividing a depth of the first recess by a thickness of the second silicon carbide layer is more than 0.2.

公开(公告)号：US09484309B2

公开(公告)日：2016-11-01

申请号：US14419841

申请日：2013-07-11

申请人： SHARP KABUSHIKI KAISHA

发明人： Toshio Hata ,  Makoto Agatani ,  Shinya Ishizaki ,  Makoto Matsuda ,  Tomokazu Nada ,  Toyonori Uemura

IPC分类号： H01L23/544 ,  G03F9/00 ,  H01L33/60 ,  H01L25/075 ,  H01L33/62 ,  H05K1/02 ,  H05K3/12 ,  H05K3/28

CPC分类号： H01L33/60 ,  G03F9/7073 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/62 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/45144 ,  H01L2224/48137 ,  H05K1/0269 ,  H05K3/12 ,  H05K3/28 ,  H05K2201/09918 ,  H05K2201/09936 ,  H01L2924/00

摘要： A light emitting device (10) includes light emitting elements (12), conductor wirings (14), and alignment marks (18) formed on a substrate (11). The alignment marks (18) and the conductor wirings (14) are formed by printing.

摘要翻译： 发光器件（10）包括发光元件（12），导体布线（14）和形成在基板（11）上的对准标记（18）。 对准标记（18）和导体布线（14）通过印刷形成。

公开(公告)号：US09472506B2

公开(公告)日：2016-10-18

申请号：US14630715

申请日：2015-02-25

申请人： International Business Machines Corporation

发明人： David J. Conklin ,  Allen H. Gabor ,  Sivananda K. Kanakasabapathy ,  Byeong Y. Kim ,  Fee Li Lie ,  Stuart A. Sieg

IPC分类号： H01L21/308 ,  H01L23/544 ,  H01L21/311 ,  H01L21/033

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/708 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453

摘要： Methods of forming a registration mark such as an alignment mark or overlay mark during formation of sub-lithographic structures are provided. Methods may include forming a plurality of mandrels over a hard mask over a semiconductor layer, each mandrel including a spacer adjacent thereto. At least one mandrel is selected of the plurality of mandrels and a mask is formed over the at least one selected mandrel. The plurality of mandrels are removed leaving the spacers, the mask preventing removal of the at least one selected mandrel. The mask is removed. A first etching patterns the sub-lithographic structures and the registration mark into the hard mask using the spacers as a pattern of the sub-lithographic structure and the at least one selected mandrel and adjacent spacer for the registration mark. A second etching forms the sub-lithographic structures in the semiconductor layer using the patterned hard mask and to form the registration mark in the semiconductor layer using the at least one selected mandrel and the patterned hard mask.

摘要翻译： 提供了在形成亚光刻结构期间形成诸如对准标记或重叠标记的对准标记的方法。 方法可以包括在半导体层上的硬掩模上形成多个心轴，每个心轴包括与其相邻的间隔物。 选择多个心轴中的至少一个心轴，并且在所述至少一个选定心轴上形成掩模。 离开间隔物去除多个心轴，掩模防止去除至少一个选定的心轴。 去除面具。 第一蚀刻使用间隔物作为亚光刻结构的图案和至少一个选定的心轴和用于对准标记的相邻间隔物，将亚光刻结构和对准标记图案化成硬掩模。 第二蚀刻使用图案化的硬掩模在半导体层中形成次光刻结构，并使用至少一个选定的心轴和图案化的硬掩模在半导体层中形成对准标记。

公开(公告)号：US20150370174A1

公开(公告)日：2015-12-24

申请号：US14764522

申请日：2014-03-06

申请人： ASML NETHERLANDS B.V.

发明人： Johannes Jacobus Matheus BASELMANS ,  Franciscus Godefridus BIJNEN ,  Daniëlle Elisabeth Maria PALMEN

IPC分类号： G03F7/20

CPC分类号： G03F9/708 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70058

摘要： A patterning device, for use in forming a marker on a substrate by optical projection, the patterning device including a marker pattern having a density profile that is periodic with a fundamental spatial frequency corresponding to a desired periodicity of the marker to be formed. The density profile is modulated (such as sinusoidally) so as to suppress one or more harmonics of the fundamental frequency, relative to a simple binary profile having the fundamental frequency.

摘要翻译： 一种用于通过光学投影在基板上形成标记的图案形成装置，所述图案形成装置包括具有对应于待形成的标记物的所需周期性的基本空间频率周期性的密度分布的标记图案。 相对于具有基本频率的简单二进制分布，密度分布被调制（例如正弦曲线）以便抑制基频的一个或多个谐波。

公开(公告)号：US20150346605A1

公开(公告)日：2015-12-03

申请号：US14656510

申请日：2015-03-12

申请人： ASML Netherlands B.V.

发明人： Arie Jeffrey DEN BOEF ,  Kaustuve Bhattacharyya

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L23/544

CPC分类号： G03F7/705 ,  G03F7/70158 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/708 ,  H01L23/544

摘要： Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to π/2 or 3π/2.

摘要翻译： 计量目标由光刻工艺形成，每个目标包括底部光栅和顶部光栅。 可以通过用辐射照射每个靶并观察衍射辐射的不对称性来测量光刻工艺的覆盖性能。 选择计量配方和目标设计的参数，以便最大化覆盖测量的准确性，而不是重现性。 该方法包括计算以下中的至少一个中的至少一个：（i）表示由顶部光栅衍射的辐射的第一辐射分量和（ii）表示在行进通过顶部之后由底部光栅衍射的辐射的第二辐射分量 光栅和中间层。 可以修改顶部光栅设计以使相对幅度接近于一致。 可以调整计量配方中照明辐射的波长，使相对相位接近于＆pgr / 2或3＆pgr / 2。