公开(公告)号：US20140010006A1

公开(公告)日：2014-01-09

申请号：US14022364

申请日：2013-09-10

Applicant: QUALCOMM Incorporated

Inventor： Hari M. Rao ,  Jung Pill Kim ,  Seung H. Kang ,  Xiaochun Zhu ,  Taehyun Kim ,  Kangho Lee ,  Xia Li ,  Wah Nam Hsu ,  Wuyang Hao ,  Jungwon Suh ,  Nicholas K. Yu ,  Matthew M. Nowak ,  Steven M. Millendorf ,  Asaf Ashkenazi

IPC: G11C11/14

CPC classification number: G11C11/16 ,  G11C11/14 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C17/02 ,  G11C17/16 ,  G11C29/027

Abstract: A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.

Abstract translation: 存储器件包括磁性隧道结（MTJ）位单元。 MTJ位单元包括第一MTJ和第二MTJ。 存储器件还包括编程电路，其被配置为通过将程序信号施加到位单元的第一MTJ和第二MTJ中的所选择的一个来在位单元处产生不可逆状态。 不可逆状态对应于通过比较在第一MTJ读取的第一值和在第二MTJ读取的第二值确定的MTJ比特单元的值。