公开(公告)号：US11079371B2

公开(公告)日：2021-08-03

申请号：US16280635

申请日：2019-02-20

Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA ,  Boston Scientific Scimed, Inc.

Inventor： Xue Zhen ,  Philippe Pierre Joseph Buhlmann ,  Steven J. Koester ,  Yao Zhang ,  Justin Theodore Nelson

IPC: G01N33/53 ,  G01N27/12 ,  G01N27/22 ,  A61B5/08 ,  G01N27/414

Abstract: Embodiments herein relate to chemical sensors, devices and systems including the same, and related methods. In an embodiment, a medical device is included. The medical device can include a graphene varactor. The graphene varactor can include a graphene layer and a self-assembled monolayer disposed on an outer surface of the graphene layer through π-π stacking interactions. The self-assembled monolayer can provide a Langmuir theta value of at least 0.9. The self-assembled monolayer can include polycyclic aromatic hydrocarbons, tetraphenylporphyrins or derivatives thereof, metallotetraphenylporphyrins, or aromatic cyclodextrins. Other embodiments are also included herein.

公开(公告)号：US20210199614A1

公开(公告)日：2021-07-01

申请号：US17249213

申请日：2021-02-24

Applicant: Regents of the University of Minnesota

Inventor： Steven J. Koester

IPC: G01N27/22 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423 ,  H01L29/93 ,  H01L31/08 ,  H01L31/115 ,  G01R27/26

Abstract: An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.

公开(公告)号：US20210057526A1

公开(公告)日：2021-02-25

申请号：US16996537

申请日：2020-08-18

Applicant: Boston Scientific Scimed, Inc. ,  REGENTS OF THE UNIVERSITY OF MINNESOTA

Inventor： Xue Zhen ,  Philippe Pierre Joseph Buhlmann ,  Steven J. Koester

IPC: H01L29/16 ,  H01L29/93 ,  A61B5/08 ,  C01B32/194 ,  G01N27/22 ,  G01N27/04

Abstract: Embodiments herein relate to chemical sensors, devices and systems including the same, and related methods. In an embodiment, a medical device is included having a graphene varactor including a graphene layer and a self-assembled monolayer disposed on an outer surface of the graphene layer through non-covalent interactions between the self-assembled monolayer and a π-electron system of graphene. The self-assembled monolayer includes one or more pillarenes, substituted pillarenes, calixarenes, substituted calixarenes, peralkylated cyclodextrins, substituted peralkylated cyclodextrins, pyrenes, or substituted pyrenes, or derivatives thereof. Other embodiments are also included herein.

公开(公告)号：US10191005B2

公开(公告)日：2019-01-29

申请号：US15368054

申请日：2016-12-02

Applicant: Regents of the University of Minnesota

Inventor： Steven J. Koester

IPC: H01L21/20 ,  G01N27/22 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423 ,  H01L29/93 ,  H01L31/08 ,  H01L31/115 ,  G01R27/26

Abstract: An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.