公开(公告)号：US20130228845A1

公开(公告)日：2013-09-05

申请号：US13865374

申请日：2013-04-18

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Digh HISAMOTO ,  Shinichiro KIMURA ,  Kan YASUI ,  Nozomu MATSUZAKI

IPC: H01L29/423

CPC classification number: H01L27/11531 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L29/42344 ,  H01L29/792

Abstract: A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor substrate via a gate insulator, and a memory gate is formed on the p-type well via a laminated film composed of a silicon oxide film, a silicon nitride film, and a silicon oxide film. The memory gate is adjacent to the selection gate via the laminated film. In the regions on both sides of the selection gate and the memory gate in the p-type well, n-type impurity diffusion layers serving as the source and drain are formed. The region controlled by the selection gate and the region controlled by the memory gate located in the channel region between said impurity diffusion layers have the different charge densities of the impurity from each other.