公开(公告)号：US20100025693A1

公开(公告)日：2010-02-04

申请号：US12458968

申请日：2009-07-28

Applicant: Rajesh Kumar Malhan ,  Yuuichi Takeuchi ,  Jeremy Rashid

Inventor： Rajesh Kumar Malhan ,  Yuuichi Takeuchi ,  Jeremy Rashid

IPC: H01L29/772 ,  H01L29/02

CPC classification number: H01L29/8083 ,  H01L29/063 ,  H01L29/0692 ,  H01L29/6609 ,  H01L29/66325 ,  H01L29/8611 ,  H01L29/872

Abstract: A wide band gap semiconductor device has a transistor cell region, a diode forming region, an electric field relaxation region located between the transistor cell region and the diode forming region, and an outer peripheral region surrounding the transistor cell region and the diode forming region. In the transistor cell region, a junction field effect transistor is disposed. In the diode forming region, a diode is disposed. In the electric field relaxation region, an isolating part is provided. The isolating part includes a trench dividing the transistor cell region and the diode forming region, a first conductivity-type layer disposed on an inner wall of the trench, and a second conductivity-type layer disposed on a surface of the first conductivity-type layer so as to fill the trench. The first conductivity-type layer and the second conductivity-type layer provide a PN junction.

Abstract translation: 宽带隙半导体器件具有晶体管单元区域，二极管形成区域，位于晶体管单元区域和二极管形成区域之间的电场弛豫区域以及围绕晶体管单元区域和二极管形成区域的外围区域。 在晶体管单元区域中，设置结型场效应晶体管。 在二极管形成区域中，设置二极管。 在电场弛豫区域中，设置隔离部。 隔离部分包括分隔晶体管单元区域和二极管形成区域的沟槽，设置在沟槽的内壁上的第一导电类型层和设置在第一导电类型层的表面上的第二导电类型层 以填补沟槽。 第一导电型层和第二导电型层提供PN结。