公开(公告)号：US20180041189A1

公开(公告)日：2018-02-08

申请号：US15392068

申请日：2016-12-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  In Young KANG ,  Ran Hee SHIN ,  Jin Suk SON

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/54

CPC classification number: H03H9/171 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.