公开(公告)号：US20220140811A1

公开(公告)日：2022-05-05

申请号：US17220119

申请日：2021-04-01

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Dae Hun JEONG ,  Ran Hee SHIN ,  Jin Suk SON ,  Hwa Sun LEE ,  Jae Goon AUM

IPC: H03H9/17 ,  H03H9/02

Abstract: A bulk acoustic wave resonator is provided. The resonator includes a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a temperature compensation layer disposed at least one of above and below the piezoelectric layer, wherein a material of the temperature compensation layer has a coefficient of thermal expansion of which a sign is opposite to a sign of a coefficient of thermal expansion of a material of the piezoelectric layer, and wherein a relation of a thickness of the temperature compensation layer and a thickness of the piezoelectric layer satisfies the following equation: 0.25

公开(公告)号：US20200067483A1

公开(公告)日：2020-02-27

申请号：US16668118

申请日：2019-10-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Ran Hee SHIN ,  Tae Kyung LEE ,  Sung HAN ,  Yun Sung KANG ,  Sung Sun KIM ,  Jin Suk SON ,  Jeong Suong YANG ,  Hwa Sun LEE ,  Eun Tae PARK

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

公开(公告)号：US20230318562A1

公开(公告)日：2023-10-05

申请号：US18319603

申请日：2023-05-18

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Je Hong KYOUNG ,  Sung Sun KIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Hwa Sun LEE

IPC: H03H9/02 ,  H03H9/17

CPC classification number: H03H9/02102 ,  H03H9/176 ,  H03H9/174 ,  H03H9/02031

Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

公开(公告)号：US20220200565A1

公开(公告)日：2022-06-23

申请号：US17475716

申请日：2021-09-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Seung Wook PARK ,  Seong Hun NA ,  Jae Hyun JUNG ,  Yeong Gyu LEE ,  Moon Chul LEE ,  Jin Suk SON ,  Jae Goon AUM

IPC: H03H9/10 ,  H03H9/05 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator package includes a package substrate; a cover bonded to the package substrate; an acoustic wave resonator accommodated in an accommodation space defined by the package substrate and the cover; a conductive wire disposed in the accommodation space to electrically connect the acoustic wave resonator to the package substrate; and a bonding portion to fixedly couple the acoustic wave resonator to the package substrate. The bonding portion includes an adhesive member including silicon.

公开(公告)号：US20200252046A1

公开(公告)日：2020-08-06

申请号：US16418107

申请日：2019-05-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Ran Hee SHIN ,  Tae Kyung LEE ,  Sung Jun LEE ,  Hwa Sun LEE ,  Je Hong KYOUNG ,  Sung Sun KIM ,  Jin Suk SON

IPC: H03H9/17 ,  H03H9/54 ,  H03H9/02

Abstract: A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.

公开(公告)号：US20200036359A1

公开(公告)日：2020-01-30

申请号：US16356333

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Ran Hee SHIN ,  Tae Kyung LEE ,  Je Hong KYOUNG ,  Jin Suk SON ,  Hwa Sun LEE ,  Sung Sun KIM

IPC: H03H9/13 ,  H01L41/047 ,  H01L41/187 ,  H03H9/02 ,  H01L41/316 ,  H03H3/02 ,  H03H9/17 ,  C22C21/00

Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.

公开(公告)号：US20190149127A1

公开(公告)日：2019-05-16

申请号：US16224025

申请日：2018-12-18

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  In Young KANG ,  Ran Hee SHIN ,  Jin Suk SON

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/54 ,  H03H9/02

CPC classification number: H03H9/171 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.

公开(公告)号：US20220038077A1

公开(公告)日：2022-02-03

申请号：US17094019

申请日：2020-11-10

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Yong Suk KIM ,  Sang Kee YOON ,  Jin Suk SON ,  Ran Hee SHIN

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a resonator having a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion and in which an insertion layer is disposed below the piezoelectric layer, wherein the insertion layer includes a SiO2 thin film injected with fluorine (F).

公开(公告)号：US20200021265A1

公开(公告)日：2020-01-16

申请号：US16271158

申请日：2019-02-08

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Kwang Su KIM ,  Jin Suk SON ,  Yeong Gyu LEE ,  Sung Sun KIM ,  Sang Jin KIM

IPC: H03H9/02 ,  H03H9/15 ,  H03H9/54

Abstract: An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other, wherein the cap includes a trench formed around the bonding portion and a protective layer covering a surface of the trench in the cap, and wherein a portion of the bonding portion fills at least a portion of the trench.

公开(公告)号：US20190058451A1

公开(公告)日：2019-02-21

申请号：US16039952

申请日：2018-07-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Ran Hee SHIN ,  Je Hong KYOUNG ,  Hwa Sun LEE ,  Jin Suk SON ,  Sung Sun KIM

IPC: H03H9/02

CPC classification number: H03H9/131 ,  H03H9/02015 ,  H03H9/173 ,  H03H9/175

Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).