公开(公告)号：US09941299B1

公开(公告)日：2018-04-10

申请号：US15604092

申请日：2017-05-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yangyin Chen ,  Christopher Petti

IPC: G11C11/22 ,  H01L27/11597 ,  H01L27/1159

CPC classification number: H01L27/11597 ,  G11C11/2257 ,  G11C11/2273 ,  G11C11/2275 ,  H01L27/11587 ,  H01L27/1159 ,  H01L27/11592 ,  H01L27/11595

Abstract: A three-dimensional memory device includes an alternating stack of word lines and insulating layers, vertical semiconductor channels vertically extending through the alternating stack, and a ferroelectric memory material located between each vertical semiconductor channel and the word lines.