公开(公告)号：US09184189B2

公开(公告)日：2015-11-10

申请号：US14311924

申请日：2014-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideki Uochi ,  Daisuke Kawae

IPC: H01L21/00 ,  H01L27/12 ,  G02F1/1345 ,  H01L29/786 ,  G02F1/1362

CPC classification number: H01L27/127 ,  G02F1/13454 ,  G02F1/13458 ,  G02F2001/13629 ,  H01L27/1225 ,  H01L29/7869

Abstract: To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.

Abstract translation: 减少对实际运行的不利影响，减少噪音的不利影响。 包括电极，与电极电连接的布线，在俯视图中与电极重叠的氧化物半导体层，在截面图中设置在电极和氧化物半导体层之间的绝缘层的结构，以及功能电路 通过布线从电极输入信号，并根据输入的信号控制操作。 使用氧化物半导体层，绝缘层，布线或电极形成电容器。

公开(公告)号：US08791456B2

公开(公告)日：2014-07-29

申请号：US13835435

申请日：2013-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Kawae

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12

CPC classification number: H01L27/0255 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/861 ,  H02H9/044 ,  Y10S257/91

Abstract: A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ

Abstract translation: 提供了使用氧化物半导体的非线性元件，例如二极管，并且整流性能良好。 在包含氢浓度小于或等于5×1019 / cm3的氧化物半导体的薄膜晶体管中，与氧化物半导体接触的源电极的功函数＆amp; ms， 与氧化物半导体接触的漏极，氧化物半导体的电子亲和力χ满足＆lt; ms＆nlE;χ＆phgr; md。 通过电连接薄膜晶体管的栅电极和漏电极，可以实现具有更好的整流特性的非线性元件。