公开(公告)号：US20140027886A1

公开(公告)日：2014-01-30

申请号：US14040270

申请日：2013-09-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Daniel-Camille Bensahel ,  Yves Morand

IPC: H01L21/22 ,  H01L29/36

CPC classification number: H01L21/22 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/36 ,  H01L29/66659

Abstract: A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction substantially perpendicular to the thickness of the substrate.

Abstract translation: 半导体器件通过在半导体衬底内形成至少一个由具有基本上垂直于衬底厚度的方向上具有不均匀组成的材料形成的连续区域来制造。