Abstract:
A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
Abstract:
An approach is provided for manufacturing a LCD apparatus. A first substrate is formed by forming a transparent conductive layer on a first transparent insulating substrate and forming a transparent conductive electrode on the transparent conductive layer. A second substrate is formed by forming a thin-film transistor (TFT) on a second transparent insulating substrate and forming a pixel electrode. The first substrate is coupled to the second substrate using a sealing member.
Abstract:
A display device may include a substrate including a circular display area and a non-display area, a plurality of pixels including a first pixel and a second pixel disposed on the display area of the substrate, a first sub-demux circuit connected to the first pixel and disposed on the non-display area, a second sub-demux circuit connected to the second pixel and disposed on the non-display area, a first connection line connected to the first sub-demux circuit and the second sub-demux circuit and disposed on the non-display area to transfer first and second data input signals to the first and second sub-demux circuits, and a plurality of gate stages connected to the pixels and disposed on the non-display area to transfer gate signals to the pixels. Some of the gate stages are disposed between the first sub-demux circuit and the second sub-demux circuit.