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公开(公告)号：US09715133B2
公开(公告)日：2017-07-25
申请号：US14512354
申请日：2014-10-10
发明人： Young-Wook Lee , Hwa-Yeul Oh , Pil-Sang Yun , Je-Hyeong Park
IPC分类号： G09G3/36 , G02F1/133 , G02F1/1362 , G02F1/1343
CPC分类号： G02F1/13306 , G02F1/136213 , G02F1/13624 , G02F2001/134345 , G09G3/3659 , G09G2300/0443 , G09G2300/0447 , G09G2300/0809 , G09G2300/0876 , G09G2320/028
摘要： The present invention relates to a liquid crystal display and a driving method thereof. The liquid crystal display of the present invention includes a pixel electrode including: a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other; a first thin film transistor connected to the first subpixel electrode; a second thin film transistor connected to the second subpixel electrode; a third thin film transistor connected to the third subpixel electrode; a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode; a first gate line connected to the first to third thin film transistors; a second gate line connected to the fourth thin film transistor; a data line connected to the first and second thin film transistors; and a storage electrode line connected to the third thin film transistor.
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公开(公告)号：US20150137127A1
公开(公告)日：2015-05-21
申请号：US14250147
申请日：2014-04-10
发明人： HYUN-KI HWANG , Sung-Man Kim , Young-Jin Park , Hwa-Yeul Oh , Young-Je Cho , Soo-Jung Chae
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/786 , H01L27/1214 , H01L27/1288 , H01L29/66742 , H01L29/78633
摘要： A display substrate includes a gate line disposed on a base substrate and extending in a direction. A data line crosses the gate line. A thin film transistor comprises a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The thin film transistor is connected to the gate line and the data line. A pixel electrode is connected to the thin film transistor. A light blocking pattern overlaps the semiconductor pattern. The light blocking pattern includes a haze-processed material of substantially the same material as the pixel electrode.
摘要翻译： 显示基板包括设置在基底基板上并沿一个方向延伸的栅极线。 数据线穿过栅极线。 薄膜晶体管包括栅电极，半导体图案，源电极和漏电极。 薄膜晶体管连接到栅极线和数据线。 像素电极连接到薄膜晶体管。 遮光图案与半导体图案重叠。 遮光图案包括与像素电极基本相同的材料的雾化处理材料。
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公开(公告)号：US09443881B2
公开(公告)日：2016-09-13
申请号：US14518278
申请日：2014-10-20
发明人： Jean-Ho Song , Shin-Il Choi , Sun-Young Hong , Shi-Yul Kim , Ki-Yeup Lee , Jae-Hyoung Youn , Sung-Ryul Kim , O-Sung Seo , Yang-Ho Bae , Jong-Hyun Choung , Dong-Ju Yang , Bong-Kyun Kim , Hwa-Yeul Oh , Pil-Soon Hong , Byeong-Beom Kim , Je-Hyeong Park , Yu-Gwang Jeong , Jong-In Kim , Nam-Seok Suh
IPC分类号： H01L29/04 , H01L27/12 , H01L29/423 , H01L29/45 , H01L29/786
CPC分类号： H01L27/124 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L29/42368 , H01L29/458 , H01L29/78669
摘要： A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
摘要翻译： 薄膜晶体管阵列面板包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线和漏极，钝化层 覆盖数据线和漏电极，并且具有露出漏电极的一部分的接触孔，以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层，下层比上层宽，下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。
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公开(公告)号：US20150053984A1
公开(公告)日：2015-02-26
申请号：US14518278
申请日：2014-10-20
发明人： JEAN-HO SONG , Shin-Il Choi , Sun-Young Hong , Shi-Yul Kim , Ki-Yeup Lee , Jae-Hyoung Youn , Sung-Ryul Kim , O-Sung Seo , Yang-Ho Bae , Jong-Hyun Choung , Dong-Ju Yang , Bong-Kyun Kim , Hwa-Yeul Oh , Pil-Soon Hong , Byeong-Beom Kim , Je-Hyeong Park , Yu-Gwang Jeong , Jong-In Kim , Nam-Seok Suh
IPC分类号： H01L27/12 , H01L29/45 , H01L29/423 , H01L29/786
CPC分类号： H01L27/124 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L29/42368 , H01L29/458 , H01L29/78669
摘要： A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
摘要翻译： 薄膜晶体管阵列面板包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线和漏极，钝化层 覆盖数据线和漏电极，并且具有露出漏电极的一部分的接触孔，以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层，下层比上层宽，下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。
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公开(公告)号：US08879031B2
公开(公告)日：2014-11-04
申请号：US14046396
申请日：2013-10-04
发明人： Kyung-Sook Jeon , Jang-Soo Kim , Hong-Suk Yoo , Yong-Hwan Kim , Hwa-Yeul Oh , Jong-In Kim , Sang-Hee Jang
IPC分类号： G02F1/1333 , G02F1/1339 , G02F1/1335
CPC分类号： G02F1/133514 , G02F1/133516 , G02F1/13394 , G02F2001/133388
摘要： Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved.
摘要翻译： 本发明的示例性实施例公开了液晶显示器（LCD）及其制造方法。 LCD可以具有显示区域和外围区域。 可以使用半色调掩模对周边区域的有机层进行图案化，并且可以在周边区域中形成突起构件。 因此，可以防止薄膜晶体管阵列面板和对应的基板临时粘附在周边区域中，使得可以均匀地保持填充在周边区域中的液晶分子的密度，并且液晶显示器的显示质量 可以改进。
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公开(公告)号：US09219156B2
公开(公告)日：2015-12-22
申请号：US14250147
申请日：2014-04-10
发明人： Hyun-Ki Hwang , Sung-Man Kim , Young-Jin Park , Hwa-Yeul Oh , Young-Je Cho , Soo-Jung Chae
IPC分类号： H01L27/14 , H01L29/786 , H01L29/66 , H01L27/12
CPC分类号： H01L29/786 , H01L27/1214 , H01L27/1288 , H01L29/66742 , H01L29/78633
摘要： A display substrate includes a gate line disposed on a base substrate and extending in a direction. A data line crosses the gate line. A thin film transistor comprises a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The thin film transistor is connected to the gate line and the data line. A pixel electrode is connected to the thin film transistor. A light blocking pattern overlaps the semiconductor pattern. The light blocking pattern includes a haze-processed material of substantially the same material as the pixel electrode.
摘要翻译： 显示基板包括设置在基底基板上并沿一个方向延伸的栅极线。 数据线穿过栅极线。 薄膜晶体管包括栅电极，半导体图案，源电极和漏电极。 薄膜晶体管连接到栅极线和数据线。 像素电极连接到薄膜晶体管。 遮光图案与半导体图案重叠。 遮光图案包括与像素电极基本相同的材料的雾化处理材料。
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公开(公告)号：US08932917B2
公开(公告)日：2015-01-13
申请号：US13940761
申请日：2013-07-12
发明人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765
摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要翻译： 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。
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公开(公告)号：US20130295731A1
公开(公告)日：2013-11-07
申请号：US13940761
申请日：2013-07-12
发明人： BYOUNG-JUNE KIM , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
IPC分类号： H01L29/66
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765
摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要翻译： 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。
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