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    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    21.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    图像传感器和电子设备，包括它们

    公开(公告)号：US20150200226A1

    公开(公告)日：2015-07-16

    申请号：US14560920

    申请日：2014-12-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong Wan JIN ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Deukseok CHUNG

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

    Abstract translation: 图像传感器包括集成有至少一个第一光感测装置的半导体衬底，该第一光感测装置被配置为感测蓝色波长区域中的光，以及至少一个第二光感测装置，被配置为感测红色波长区域中的光，滤色器层 半导体衬底并且包括被配置为选择性地吸收蓝色波长区域中的光的蓝色滤色器和被配置为选择性地吸收红色波长区域中的光的红色滤色器以及滤色器层上的第三感光装置，并且包括 一对电极彼此面对，以及一对电极之间的光活性层，并且被配置为选择性地吸收绿色波长区域中的光。

    PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    22.
    发明申请
    PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 有权
    光电器件和图像传感器

    公开(公告)号：US20140239271A1

    公开(公告)日：2014-08-28

    申请号：US14044315

    申请日：2013-10-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Seon-Jeong LIM

    IPC: H01L31/0232 ,  H01L51/44

    CPC classification number: H01L51/442 ,  H01L27/307 ,  H01L51/4253 ,  H01L51/4273 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    Abstract: A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.

    Abstract translation: 光电子器件包括第一电极，面对第一电极的第二电极，第一电极和第二电极之间的有源层，以及在第一电极和有源层之间的辅助层，辅助层包括第一辅助层，包括 金属氧化物和金属，以及包括HOMO能级大于或等于约6.0eV的第一有机材料的第二辅助层。

    SENSORS AND ELECTRONIC DEVICES
    25.
    发明申请
    SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20220013585A1

    公开(公告)日：2022-01-13

    申请号：US17485737

    申请日：2021-09-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  Hyesung CHOI ,  Ohkyu KWON ,  Changki KIM ,  Hwang Suk KIM ,  Bum Woo PARK ,  Jae Jun LEE

    IPC: H01L27/30 ,  H01L27/146 ,  H01L51/42 ,  H01L51/50

    Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS
    27.
    发明申请
    ORGANIC IMAGE SENSORS WITHOUT COLOR FILTERS 有权

    公开(公告)号：US20210366991A1

    公开(公告)日：2021-11-25

    申请号：US17392996

    申请日：2021-08-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L27/28

    Abstract: An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

    SENSORS AND ELECTRONIC DEVICES
    29.
    发明申请
    SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210036061A1

    公开(公告)日：2021-02-04

    申请号：US16788857

    申请日：2020-02-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  Hyesung CHOI ,  Ohkyu KWON ,  Changki KIM ,  Hwang Suk KIM ,  Bum Woo PARK ,  Jae Jun LEE

    IPC: H01L27/30 ,  H01L51/42

    Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

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