公开(公告)号：US20190148312A1

公开(公告)日：2019-05-16

申请号：US15927239

申请日：2018-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Harsono S. Simka ,  Ganesh Hegde ,  Joon Goo Hong ,  Rwik Sengupta ,  Mark S. Rodder

IPC: H01L23/00 ,  H01L23/522 ,  H01L27/02 ,  H04L9/32

CPC classification number: H01L23/573 ,  G09C1/00 ,  H01L23/5228 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L27/0207 ,  H04L9/3278

Abstract: A hardware-embedded security system is described. The system includes connective components, circuit elements and an insulator. The connective components include a variable conductivity layer that is conductive for a first stoichiometry and insulating for a second stoichiometry. The variable conductivity layer is conductive for a first portion of the connective components connected to a first portion of the circuit elements. The variable conductivity layer is insulating for a second portion of the connective components connected to a second portion of the circuit elements. Thus, the first portion of the circuit elements are active and the second portion of the circuit elements are inactive. The insulator is adjacent to at least a portion of each of the connective components. The first stoichiometry may be indistinguishable from the second stoichiometry via optical imaging and electron imaging of a portion of the insulator and the variable conductivity layer.

公开(公告)号：US20190131451A1

公开(公告)日：2019-05-02

申请号：US15872455

申请日：2018-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Ganesh Hegde

IPC: H01L29/78 ,  H01L21/768

Abstract: A method provides a source-drain stressor for a semiconductor device including source and drain regions. Recesses are formed in the source and drain regions. An insulating layer covers the source and drain regions. The recesses extend through the insulating layer above the source and drain regions. An intimate mixture layer of materials A and B is provided. Portions of the intimate mixture layer are in the recesses. The portions of the intimate mixture layer have a height and a width. The height divided by the width is greater than three. A top surface of the portions of the intimate mixture layer in the recesses is free. The intimate mixture layer is reacted to form a reacted intimate mixture layer including a compound AxBy. The compound AxBy occupies less volume than a corresponding portion of the intimate mixture layer.

公开(公告)号：US20160133745A1

公开(公告)日：2016-05-12

申请号：US14934045

申请日：2015-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Ganesh Hegde ,  Mark S. Rodder

IPC: H01L29/78 ,  H01L21/768

CPC classification number: H01L29/7845 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/7848

Abstract: Exemplary embodiments provide methods and systems for fabricating a metal source-drain stressor in a MOS device channel having improved tensile stress. Aspects of exemplary embodiment include forming a recess in source and drain areas; forming a metal contact layer on surfaces of the recess that achieves low contact resistivity; forming a metallic diffusion barrier over the metal contact layer; forming a layer M as an intimate mixture of materials A and B that substantially fills the recess; capping the layer M with a capping layer so that layer M is fully encapsulated and the capping layer prevents diffusion of A and B; and forming a compound AxBy within the layer M via a thermal reaction resulting in a reacted layer M comprising the metal source-drain stressor.

Abstract translation: 示例性实施例提供了在具有改善的拉伸应力的MOS器件通道中制造金属源极 - 漏极应力器的方法和系统。 示例性实施例的方面包括在源极和漏极区域中形成凹部; 在凹陷的表面上形成接触电阻率低的金属接触层; 在金属接触层上形成金属扩散阻挡层; 形成层M作为基本上填充凹部的材料A和B的紧密混合物; 用覆盖层覆盖层M，使得层M被完全封装，并且覆盖层防止A和B的扩散; 以及通过热反应在层M内形成化合物AxBy，导致包含金属源 - 漏应力源的反应层M。