公开(公告)号：US20170179284A1

公开(公告)日：2017-06-22

申请号：US15384587

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Youn Kim ,  Gi Gwan Park

IPC: H01L29/78 ,  H01L29/08 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/165 ,  H01L29/06 ,  H01L27/092 ,  H01L29/161

CPC classification number: H01L29/7843 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first fin-type pattern in the first region, a second fin-type pattern in the second region, a first gate structure intersecting the first fin-type pattern, the first gate structure including a first gate spacer, a second gate structure intersecting the second fin-type pattern, the second gate structure including a second gate spacer, a first epitaxial pattern formed on opposite sides of the first gate structure, on the first fin-type pattern, the first epitaxial pattern having a first impurity, a second epitaxial pattern formed on opposite sides of the second gate structure, on the second fin-type pattern, the second epitaxial pattern having a second impurity, a first silicon nitride film extending along a sidewall of the first gate spacer, and a first silicon oxide film extending along a sidewall of the first gate spacer.