公开(公告)号：US20180182843A1

公开(公告)日：2018-06-28

申请号：US15897931

申请日：2018-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min LEE ,  HYONGSOO KIM ,  JONGRYUL JUN

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/90 ,  H01L27/10852

Abstract: A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.

公开(公告)号：US20170256628A1

公开(公告)日：2017-09-07

申请号：US15437563

申请日：2017-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum LIM ,  Jong-Ryul JUN ,  Eun-A KIM ,  Jong-Min LEE

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/027 ,  H01L21/768

CPC classification number: H01L29/66795 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/76895 ,  H01L28/00 ,  H01L29/66621

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.