公开(公告)号：US09887373B2

公开(公告)日：2018-02-06

申请号：US14479845

申请日：2014-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youl Lee ,  Joo Young Kim ,  Jong Won Chung ,  Sang Yoon Lee ,  Jeong Il Park

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0007 ,  H01L51/0017 ,  H01L51/0018 ,  H01L51/0074 ,  H01L51/0558

Abstract: A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.

公开(公告)号：US09761818B2

公开(公告)日：2017-09-12

申请号：US15168342

申请日：2016-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjun Yun ,  Joo Young Kim ,  Byong Gwon Song ,  Jaewon Jang ,  Jiyoung Jung ,  Ajeong Choi

IPC: H01L51/05 ,  H01L51/00 ,  H01L27/28

CPC classification number: H01L51/0545 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0018 ,  H01L51/0074 ,  H01L51/0558

Abstract: A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.

公开(公告)号：US20170149002A1

公开(公告)日：2017-05-25

申请号：US15267242

申请日：2016-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyoung Jung ,  Joo Young Kim ,  Jeong II Park

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0002 ,  H01L51/0012 ,  H01L51/0533

Abstract: A method of manufacturing an organic thin film transistor includes forming a gate electrode and a gate insulator on a substrate, forming a self-assembled layer from self-assembled layer precursor on the gate insulator and forming an organic semiconductor on the self-assembled layer, a friction force is applied to the surface of the self-assembled layer in at least two directions between forming the self-assembled layer and forming the organic semiconductor, and an organic thin film transistor manufactured by the method, and a display device including the same are provided. A device of treating a surface of a thin film used for the method is provided.