公开(公告)号：US20210065751A1

公开(公告)日：2021-03-04

申请号：US16816476

申请日：2020-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooyong Park ,  Chanho Kim ,  Daeseok Byeon

IPC: G11C5/06 ,  G11C7/18 ,  G11C5/04

Abstract: A memory device includes a first semiconductor chip including a memory cell array disposed on a first substrate, and a first bonding metal on a first uppermost metal layer of the first semiconductor chip, and a second semiconductor chip including circuit devices disposed on a second substrate and a second bonding metal on a second uppermost metal layer of the second semiconductor chip, the circuit devices providing a peripheral circuit operating the memory cell array. The first and second semiconductor chips are electrically connected to each other by the first bonding metal and the second bonding metal in a bonding area. A routing wire electrically connected to the peripheral circuit is disposed in one or both of the first and second uppermost metal layers and is disposed in a non-bonding area in which the first and second semiconductor chips are not electrically connected to each other.

公开(公告)号：US20200258580A1

公开(公告)日：2020-08-13

申请号：US16562999

申请日：2019-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooyong Park

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10

Abstract: A nonvolatile memory device that performs a read operation during which row decoder circuitry applies a turn on voltage to a first ground selection line selected from a plurality of ground selection lines, applies a turn off voltage to at least one second ground selection line selected from the plurality of ground selection lines, the at least one second ground selection line being selected from the plurality of ground selection lines based on a read address associated with the read operation, and applies the turn off voltage to an unselected ground selection line among the plurality of ground selection lines after applying a prepulse voltage to the unselected ground selection line.

公开(公告)号：US20190333586A1

公开(公告)日：2019-10-31

申请号：US16163968

申请日：2018-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooyong Park ,  Jin-Young Kim ,  Kuihan Ko ,  Han Il Park ,  Bongsoon Lim

IPC: G11C16/14 ,  G06F3/06

Abstract: A storage device includes a nonvolatile memory device that includes memory blocks, each including memory cells, and a controller that receives a first write request from an external host device. Depending on the first write request, the controller transmits a first sanitize command to the nonvolatile memory device and transmits first write data and a first write command associated with the first write request to the nonvolatile memory device. The nonvolatile memory device is configured to sanitize first data previously written to first memory cells of a first memory block of the memory blocks in response to the first sanitize command. The nonvolatile memory device is further configured to write the first write data to second memory cells of the first memory block in response to the first write command.